Characterization of Microporous Silicon Fabricated by Immersion Scanning

1991 ◽  
Vol 256 ◽  
Author(s):  
E. Bassous ◽  
M. Freeman ◽  
J.-M. Halbout ◽  
S. S. lyer ◽  
V. P. Kesan ◽  
...  
Keyword(s):  
Light Emission ◽  
Forward Bias ◽  
Visible Region ◽  
Thermal Desorption Spectroscopy ◽  
Hydrogen Desorption ◽  
Si Substrates ◽  
Desorption Spectrum ◽  
Pn Junctions ◽  
Pl Intensity

ABSTRACTA novel immersion scanning technique for making microporous silicon has been successfully applied to blank and lithographically patterned Si substrates. The advantages of the method lie in its simplicity, speed and adaptability to large and odd-size substrates. The photoluminescence (PL) spectra of microporous Si show a continuous decrease in intensity between 200K and 2K, but are fully reversible. Thermal desorption spectroscopy on microporous Si shows a classic hydrogen desorption spectrum which coincides with a quenching of the PL intensity. Under constant excitation, a degradation of PL Intensity occurs in oxygen and wet nitrogen but is only partially reversible in dry N2. Microporous Si PN junctions exhibiting normal I-V characteristics have been successfully fabricated with standard Si VLSI processes. Visible light emission under forward bias is detected which increases linearly In Intensity with Input current. This is the first observation of electroluminescence in the visible region from microporous SI PN junctions.

Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode

2013 ◽  
Vol 538 ◽  
pp. 324-327 ◽  
Author(s):  
Chao Xiong ◽  
An Cheng Xu ◽  
Xing Zhong Lu ◽  
Lei Chen ◽  
Xi Fang Zhu ◽  
...  
Keyword(s):  
Light Emission ◽  
Low Cost ◽  
Forward Bias ◽  
Growth Direction ◽  
Heterojunction Diode ◽  
Conduction Band Offset ◽  
Single Carrier ◽  
Linear Relationships ◽  
Voltage Curve

The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuI/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuI/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.

Fabrication and Characterization of p-CuSCN/n-Si Heterojunction Diode

2013 ◽  
Vol 321-324 ◽  
pp. 470-473
Author(s):  
Chao Xiong ◽  
Hong Chun Yuan ◽  
Lei Chen ◽  
Jin Xiao ◽  
Li Hua Ding ◽  
...  
Keyword(s):  
Light Emission ◽  
Low Cost ◽  
Forward Bias ◽  
Photovoltaic Devices ◽  
Heterojunction Diode ◽  
Conduction Band Offset ◽  
Single Carrier ◽  
Linear Relationships ◽  
Voltage Curve

The p-CuSCN /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal β-CuSCN films are polycrystalline nature. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuSCN/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 2.1 eV and 1.5 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuSCN/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuSCN/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.

Fabrication and Characterization of OLED with Magnesium Complex of Benzimidazol-2-Yl Pyridine as Emission Layer

2012 ◽  
Vol 557-559 ◽  
pp. 748-754
Author(s):  
Yu Feng Lin ◽  
Pin Wen Cheng ◽  
Shih Hsuan Chiu ◽  
Chen Hao Wang ◽  
Shung Jim Yang ◽  
...  
Keyword(s):  
Light Emission ◽  
Visible Region ◽  
Blue Emission ◽  
Decomposition Temperature ◽  
Melting Transition ◽  
Emission Layer ◽  
Maximum Brightness ◽  
Light Emitting ◽  
Light Emitting Devices

A bright blue emission material, bis {(benzimidazol-2-yl) Pyridenato} magnesium (MgBIP) used for organic light emitting devices, has been synthesized. The decomposition temperature was observed at 517 °C and no melting transition (Tm) of MgBIP was observed up to 400 °C. For three-layer LED devices with the configuration of ITO/NPB/MgBIP/ Alq3/MgAg, the white light emission covering the whole visible region from 400 to 750 nm with the maximum brightness of 2770 cd/m2and current density of 304 mA/cm2was observed.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

The Role of Cr in H Desorption Kinetics in Rapidly Solidified Al

2014 ◽  
Vol 783-786 ◽  
pp. 264-269 ◽  
Author(s):  
Iya I. Tashlykova-Bushkevich ◽  
Keitaro Horikawa ◽  
Goroh Itoh
Keyword(s):  
High Temperature ◽  
Thermal Desorption ◽  
High Purity ◽  
Thermal Desorption Spectroscopy ◽  
Secondary Phase ◽  
Hydrogen Desorption ◽  
Oxide Surface ◽  
Desorption Kinetics ◽  
Hydrogen Trapping ◽  
Rapidly Solidified

Hydrogen desorption kinetics for rapidly solidified high purity Al and Al-Cr alloy foils containing 1.0, 1.5 and 3.0 at % Cr were investigated by means of thermal desorption analysis (TDA) at a heating rate of 3.3°C/min. For the first time, it was found that oxide inclusions of Al2O3 are dominant high-temperature hydrogen traps compared with pores and secondary phase precipitates resulted in rapid solidification of Al and its alloys. The correspondent high-temperature evolution rate peak was identified to be positioned at 600°C for high purity Al and shifted to 630°C for Al-Cr alloys. Amount of hydrogen trapped by dislocations increases in the alloys depending on Cr content. Microstructural hydrogen trapping behaviour in low-and intermediate temperature regions observed here was in coincidence with previous data obtained for RS materials using thermal desorption spectroscopy (TDS). The present results on hydrogen thermal desorption evolution indicate that the effect of oxide surface layers becomes remarkable in TDA measurements and show advantages in combinations of both desorption analysis methods to investigate hydrogen desorption kinetics in materials.

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

scholarly journals Electroluminescence and photo-response of inorganic halide perovskite bi-functional diodes

Nanophotonics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 1981-1988 ◽  
Author(s):  
Ning Li ◽  
Ying Suet Lau ◽  
Yanqin Miao ◽  
Furong Zhu
Keyword(s):  
Visible Light ◽  
High Speed ◽  
Light Emission ◽  
Forward Bias ◽  
Green Light ◽  
Visible Light Communication ◽  
Light Emitting ◽  
Response Characteristics ◽  
Photo Response ◽  
Halide Perovskite

AbstractIn this work, we report our efforts to develop a novel inorganic halide perovskite-based bi-functional light-emitting and photo-detecting diode. The bi-functional diode is capable of emitting a uniform green light, with a peak wavelength of 520 nm, at a forward bias of >2 V, achieving a high luminance of >103 cd/m2 at 7 V. It becomes an efficient photodetector when the bi-functional diode is operated at a reverse bias, exhibiting sensitivity over a broadband wavelength range from ultraviolet to visible light. The bi-functional diode possesses very fast transient electroluminescence (EL) and photo-response characteristics, e.g. with a short EL rising time of ~6 μS and a photo-response time of ~150 μS. In addition, the bi-functional diode also is sensitive to 520 nm, the wavelength of its peak EL emission. The ability of the bi-functional diodes for application in high speed visible light communication was analyzed and demonstrated using two identical bi-functional diodes, one performed as the signal generator and the other acted as a signal receiver. The dual functions of light emission and light detection capability, enabled by bi-functional diodes, are very attractive for different applications in under water communication and visible light telecommunications.

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