Scanning Probe Microscopies for the Electrical Characterization of GaAs pn Junctions

2003 ◽  
Author(s):  
N. Barreau
Keyword(s):  
Electrical Characterization ◽  
Scanning Probe ◽  
Pn Junctions

scholarly journals The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

2012 ◽  
Vol 3 ◽  
pp. 722-730 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Xavier Obradors ◽  
Carmen Ocal
Keyword(s):  
Memory Effect ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Versatile Tool ◽  
Scanning Force ◽  
Memristor Device

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.

Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1430-1433 ◽  
Author(s):  
Alexander Hofer ◽  
Roland Biberger ◽  
Günther Benstetter ◽  
Björn Wilke ◽  
Holger Göbel
Keyword(s):  
Organic Semiconductor ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Probe ◽  
Semiconductor Films ◽  
Probe Microscopy

Local electrical characterization of SOI wafers by scanning probe microscopy

2002 ◽  
Vol 91-92 ◽  
pp. 156-159 ◽  
Author(s):  
Yoshimori Ishizuka ◽  
Takayuki Uchihashi ◽  
Haruhiko Yoshida ◽  
Seigo Kishino
Keyword(s):  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Probe ◽  
Probe Microscopy

Conductive Atomic Force Microscopy and Scanning Impedance Microscopy for the Imaging of Electrical Domain in CaCu3Ti4O12 Perovskite Oxide

2009 ◽  
Vol 1232 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
Vito Raineri
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Boundaries ◽  
Electrical Characterization ◽  
Scanning Probe ◽  
Perovskite Oxide ◽  
Electrical Characteristics ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

AbstractElectrical characterization of CaCu3Ti4O12 (CCTO) ceramics with scanning probe based techniques has been carried out. In particular, conductive atomic force microscopy (C-AFM) and scanning impedance microscopy (SIM) have been used to demonstrate the presence, shape and size in CCTO ceramics of the different electrically domains, both at the grain boundaries and within the grains. The electrical characteristics of single grains and of single domains have been evaluated and it has been observed that the conductive grains are surrounded by insulating grain boundaries.

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