Cs diffusion mechanisms in UO2 investigated by SIMS, TEM and atomistic simulations

Author(s):  
Clémentine Panetier ◽  
Yves PIPON ◽  
Clotilde Gaillard ◽  
Denis Mangin ◽  
Jonathan Amodeo Amodeo ◽  
...  
1998 ◽  
Vol 527 ◽  
Author(s):  
John Corish

ABSTRACTThe experimental and atomistic simulation methodologies by which microscopic diffusion mechanisms can be determined in solids are described. Measurement of the Haven Ratio requires evaluation of the diffusion coefficient and of the ionic conductivity for the species in pure and doped specimens and is, in practice, limited to simpler materials. Atomistic simulations using lattice statics, molecular dynamics and Monte Carlo techniques can yield very detailed information on the pathways followed by migrating ions and are being utilised more extensively for this purpose. Examples of such experimental and simulation studies are discussed.


2015 ◽  
Vol 363 ◽  
pp. 1-11 ◽  
Author(s):  
Yuri Mishin

This paper presents an overview of recent computer simulations of grain boundary (GB)diffusion focusing on atomistic understanding of diffusion mechanisms. At low temperatures when GBstructure is ordered, diffusion is mediated by point defects inducing collective jumps of several atomsforming a chain. At high temperatures when GB structure becomes highly disordered, the diffusionprocess can be analyzed by statistical methods developed earlier for supercooled liquids and glasses.Previous atomistic simulations reported in the literature as well as the new simulations presented in thispaper reveal a close similarity between diffusion mechanisms in GBs and in supercooled liquids. GBdiffusion at high temperatures is dominated by collective displacements of atomic groups (clusters),many of which have one-dimensional geometries similar to strings. The recent progress in this fieldmotivates future extensions of atomistic simulations to diffusion in alloy GBs, particularly in glassformingsystems.


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