The topography of organic light-emitting diode-component functional layers as studied by atomic force microscopy

2004 ◽  
Vol 14 (4) ◽  
pp. 155-157 ◽  
Author(s):  
Oksana V. Kotova ◽  
Svetlana V. Eliseeva ◽  
Elena V. Perevedentseva ◽  
Tatyana F. Limonova ◽  
Raida A. Baigeldieva ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Organic Light

Localized Current Injection and Submicron Organic Light-Emitting Device on a Pyramidal Atomic Force Microscopy Tip

Nano Letters ◽  
2007 ◽  
Vol 7 (12) ◽  
pp. 3645-3649 ◽  
Author(s):  
Yiying Zhao ◽  
Kwang H. An ◽  
Shuo Chen ◽  
Brendan O'Connor ◽  
Kevin P. Pipe ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Current Injection ◽  
Light Emitting ◽  
Force Microscopy ◽  
Atomic Force ◽  
Organic Light

Local nanotip arrays sculptured by atomic force microscopy to enhance the light-output efficiency of GaN-based light-emitting diode structures

2014 ◽  
Vol 25 (19) ◽  
pp. 195401 ◽  
Author(s):  
Chun-Ying Huang ◽  
Yung-Chi Yao ◽  
Ya-Ju Lee ◽  
Tai-Yuan Lin ◽  
Wen-Jang Kao ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Emitting ◽  
Force Microscopy ◽  
Atomic Force ◽  
Output Efficiency

scholarly journals Improved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2Buffer Layers

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Chien-Jung Huang ◽  
Kan-Lin Chen ◽  
Po-Wen Sze ◽  
Wen-Ray Chen ◽  
Teen-Hang Meen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Electron Beam Evaporation ◽  
Hole Injection ◽  
Driving Voltage ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Force Microscopy ◽  
Organic Light

An ultrathin hole-injection buffer layer (HBL) using silicon dioxide (SiO2) by electron beam evaporation in flexible organic light-emitting diode (FOLED) has been fabricated. While the current of the device at constant driving voltage decreases as increasing SiO2thickness. Compared to the different thicknesses of the buffer layer, the FOLED with the buffer layer of 4 nm showed the highest luminous efficiency. The atomic force microscopy (AFM) investigation of indium tin oxide (ITO)/SiO2topography reveals changes at the interface between SiO2and N,N′-bis-(1-naphthl)-diphenyl-1,1′-bipheny-4,4′-diamine (NPB), resulting in ultrathin SiO2layers being a clear advantage for a FOLED. However, the SiO2can be expected to be a good buffer layer material and thus enhance the emission performance of the FOLED.

Effects of Nitridation Time on Top-emission Inverted Organic Light Emitting Diode

PIERS Online ◽  
2007 ◽  
Vol 3 (6) ◽  
pp. 821-824 ◽  
Author(s):  
Chien-Chang Tseng ◽  
Liang-Wen Ji ◽  
Yu Sheng Tsai ◽  
Fuh-Shyang Juang
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Nitridation Time ◽  
Organic Light
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