Impact of interface traps on gate-induced drain leakage current inn-type metal oxide semiconductor field effect transistor

International Journal of Electronics ◽

10.1080/00207210500092677 ◽

2005 ◽

Vol 92 (9) ◽

pp. 539-552 ◽

Author(s):

A. Touhami * ◽

A. Bouhdada

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Effect Transistor

Download Full-text

Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1598 ◽

2004 ◽

Vol 43 (No. 12B) ◽

pp. L1598-L1600 ◽

Author(s):

Takuji Hosoi ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Effect Transistor ◽

Download Full-text

Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521479 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AA05 ◽

Author(s):

G. Roll ◽

S. Jakschik ◽

M. Goldbach ◽

A. Wachowiak ◽

T. Mikolajick ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Defects ◽

High K ◽

Effect Transistor

Download Full-text

Improvement of drain leakage current characteristics in metal-oxide-semiconductor-field-effect-transistor by asymmetric source-drain structure

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218598 ◽

2012 ◽

Author(s):

Byoungseon Choi ◽

Hyunae Park ◽

Dongsoo Kim ◽

Byoungdeog Choi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Current Characteristics

Download Full-text

The n-type metal oxide semiconductor field-effect transistor bias impact on the modelling of the gate-induced drain leakage current

Semiconductor Science and Technology ◽

10.1088/0268-1242/17/12/311 ◽

2002 ◽

Vol 17 (12) ◽

pp. 1272-1277 ◽

Author(s):

A Touhami ◽

A Bouhdada

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

Download Full-text

Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.104101 ◽

2012 ◽

Vol 51 (10R) ◽

pp. 104101

Author(s):

Yuki Mori ◽

Akio Shima ◽

Kenichi Takeda ◽

Ren-ichi Yamada

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Effect Transistor

Download Full-text

Modeling of gate-induced drain leakage current in n-type metal–oxide–semiconductor field effect transistor

Journal of Applied Physics ◽

10.1063/1.1327607 ◽

2001 ◽

Vol 89 (3) ◽

pp. 1880 ◽

Author(s):

A. Touhami ◽

A. Bouhdada

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

Download Full-text

Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection

Acta Physica Sinica ◽

10.7498/aps.60.086107 ◽

2011 ◽

Vol 60 (8) ◽

pp. 086107

Author(s):

Chen Jian-Jun ◽

Chen Shu-Ming ◽

Liang Bin ◽

Liu Bi-Wei ◽

Chi Ya-Qing ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Single Event ◽

Charge Sharing ◽

Effect Transistor ◽

Download Full-text

Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.104101 ◽

2012 ◽

Vol 51 ◽

pp. 104101

Author(s):

Yuki Mori ◽

Akio Shima ◽

Kenichi Takeda ◽

Ren-ichi Yamada

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Effect Transistor

Download Full-text

Analysis of a Novel Self-Aligned Elevated Source Drain Metal-Oxide-Semiconductor Field-Effect Transistor with Reduced Gate-Induced Drain Leakage Current and High Driving Capability

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6208 ◽

2000 ◽

Vol 39 (Part 1, No. 11) ◽

pp. 6208-6211

Author(s):

Kyung-Whan Kim ◽

Chang-Soon Choi ◽

Woo-Young Choi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Elevated Source ◽

Driving Capability

Download Full-text

Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor

Applied Physics Letters ◽

10.1063/1.3559223 ◽

2011 ◽

Vol 98 (10) ◽

pp. 103513 ◽

Author(s):

Yoshiki Yonamoto ◽

Naotoshi Akamatsu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Interface Traps ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability ◽

Effect Transistor

Download Full-text