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Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
◽
10.1116/1.3521479
◽
2011
◽
Vol 29
(1)
◽
pp. 01AA05
◽
Cited By ~ 1
Author(s):
G. Roll
◽
S. Jakschik
◽
M. Goldbach
◽
A. Wachowiak
◽
T. Mikolajick
◽
...
Keyword(s):
Metal Oxide
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Defects
◽
High K
◽
Effect Transistor
Download Full-text
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References
Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
Japanese Journal of Applied Physics
◽
10.1143/jjap.43.l1598
◽
2004
◽
Vol 43
(No. 12B)
◽
pp. L1598-L1600
◽
Cited By ~ 2
Author(s):
Takuji Hosoi
◽
Yoshinari Kamakura
◽
Kenji Taniguchi
Keyword(s):
Metal Oxide
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Leakage Current
◽
Gate Leakage
◽
Effect Transistor
◽
Soft Breakdown
Download Full-text
Improvement of drain leakage current characteristics in metal-oxide-semiconductor-field-effect-transistor by asymmetric source-drain structure
2012 IEEE International Meeting for Future of Electron Devices, Kansai
◽
10.1109/imfedk.2012.6218598
◽
2012
◽
Cited By ~ 1
Author(s):
Byoungseon Choi
◽
Hyunae Park
◽
Dongsoo Kim
◽
Byoungdeog Choi
Keyword(s):
Metal Oxide
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Effect Transistor
◽
Current Characteristics
Download Full-text
Impact of interface traps on gate-induced drain leakage current inn-type metal oxide semiconductor field effect transistor
International Journal of Electronics
◽
10.1080/00207210500092677
◽
2005
◽
Vol 92
(9)
◽
pp. 539-552
◽
Cited By ~ 4
Author(s):
A. Touhami *
◽
A. Bouhdada
Keyword(s):
Metal Oxide
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Traps
◽
Effect Transistor
Download Full-text
The n-type metal oxide semiconductor field-effect transistor bias impact on the modelling of the gate-induced drain leakage current
Semiconductor Science and Technology
◽
10.1088/0268-1242/17/12/311
◽
2002
◽
Vol 17
(12)
◽
pp. 1272-1277
◽
Cited By ~ 1
Author(s):
A Touhami
◽
A Bouhdada
Keyword(s):
Metal Oxide
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Effect Transistor
Download Full-text
Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor
Applied Physics Letters
◽
10.1063/1.1773370
◽
2004
◽
Vol 85
(7)
◽
pp. 1286-1288
◽
Cited By ~ 21
Author(s):
Se Jong Rhee
◽
Chang Yong Kang
◽
Chang Seok Kang
◽
Rino Choi
◽
Chang Hwan Choi
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
High K
◽
Effect Transistor
Download Full-text
New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation
Journal of Applied Physics
◽
10.1063/1.4772944
◽
2013
◽
Vol 113
(1)
◽
pp. 013711
◽
Cited By ~ 13
Author(s):
Min Xu
◽
Jiangjiang J. Gu
◽
Chen Wang
◽
D. M. Zhernokletov
◽
R. M. Wallace
◽
...
Keyword(s):
Metal Oxide
◽
Crystal Orientation
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Characterization
◽
High K
◽
Effect Transistor
Download Full-text
Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistor
Japanese Journal of Applied Physics
◽
10.7567/jjap.51.104101
◽
2012
◽
Vol 51
(10R)
◽
pp. 104101
Author(s):
Yuki Mori
◽
Akio Shima
◽
Kenichi Takeda
◽
Ren-ichi Yamada
Keyword(s):
Metal Oxide
◽
Experimental Evidence
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Random Telegraph Noise
◽
Telegraph Noise
◽
Effect Transistor
Download Full-text
Modeling of gate-induced drain leakage current in n-type metal–oxide–semiconductor field effect transistor
Journal of Applied Physics
◽
10.1063/1.1327607
◽
2001
◽
Vol 89
(3)
◽
pp. 1880
◽
Cited By ~ 7
Author(s):
A. Touhami
◽
A. Bouhdada
Keyword(s):
Metal Oxide
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Effect Transistor
Download Full-text
Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor
Acta Physica Sinica
◽
10.7498/aps.63.237304
◽
2014
◽
Vol 63
(23)
◽
pp. 237304
Author(s):
Bai Yu-Rong
◽
Xu Jing-Ping
◽
Liu Lu
◽
Fan Min-Min
◽
Huang Yong
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Gate Dielectric
◽
Drain Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Fully Depleted
◽
High K
◽
Effect Transistor
Download Full-text
Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistor
Japanese Journal of Applied Physics
◽
10.1143/jjap.50.10pg02
◽
2011
◽
Vol 50
(10)
◽
pp. 10PG02
◽
Cited By ~ 3
Author(s):
Koji Eriguchi
◽
Masayuki Kamei
◽
Yoshinori Takao
◽
Kouichi Ono
Keyword(s):
Metal Oxide
◽
Threshold Voltage
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Analytic Model
◽
Voltage Variation
◽
High K
◽
Effect Transistor
Download Full-text
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