Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
2004 ◽
Vol 43
(No. 12B)
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pp. L1598-L1600
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2010 ◽
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(4)
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pp. 173-181
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2011 ◽
Vol 29
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pp. 01AA05
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Vol 92
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pp. 539-552
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2010 ◽
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