Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection

Acta Physica Sinica ◽

10.7498/aps.60.086107 ◽

2011 ◽

Vol 60 (8) ◽

pp. 086107

Author(s):

Chen Jian-Jun ◽

Chen Shu-Ming ◽

Liang Bin ◽

Liu Bi-Wei ◽

Chi Ya-Qing ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Single Event ◽

Charge Sharing ◽

Effect Transistor ◽

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Impact of Parasitic Bipolar Effect on Single-Event Upset in p-Type Metal–Oxide–Semiconductor Field Effect Transistor with Embedded SiGe

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc15 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC15 ◽

Author(s):

Takashi Kato ◽

Taiki Uemura ◽

Hiroko Mori ◽

Yoshihiro Ikeda ◽

Kaina Suzuki ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Event Upset ◽

Single Event ◽

Effect Transistor ◽

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Novel Si/SiC Heterojunction Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor with P-type Buried Layer Breaking Silicon Limit

Chinese Physics B ◽

10.1088/1674-1056/abcf45 ◽

2020 ◽

Author(s):

Baoxing Duan ◽

Xin Huang ◽

Haitao Song ◽

Yandong Wang ◽

Yintang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

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Impact of interface traps on gate-induced drain leakage current inn-type metal oxide semiconductor field effect transistor

International Journal of Electronics ◽

10.1080/00207210500092677 ◽

2005 ◽

Vol 92 (9) ◽

pp. 539-552 ◽

Author(s):

A. Touhami * ◽

A. Bouhdada

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Effect Transistor

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Simulation study of single event effects for split‐gate enhanced power U‐shape metal‐oxide semiconductor field‐effect transistor

IET Power Electronics ◽

10.1049/iet-pel.2013.0633 ◽

2014 ◽

Vol 7 (12) ◽

pp. 2895-2901 ◽

Author(s):

Wang Ying ◽

Cheng‐Hao Yu ◽

Fei Cao ◽

Ming‐Guang Shan

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Event ◽

Single Event Effects ◽

Effect Transistor

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35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l629 ◽

1999 ◽

Vol 38 (Part 2, No. 6A/B) ◽

pp. L629-L631 ◽

Author(s):

Wataru Saitoh ◽

Shigeharu Yamagami ◽

Atsushi Itoh ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

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Effective mobility characteristics of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3457936 ◽

2010 ◽

Vol 28 (4) ◽

pp. 799-801 ◽

Author(s):

Moongyu Jang ◽

Myungsim Jun ◽

Taehyoung Zyung

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Mobility ◽

Effect Transistor ◽

Barrier Metal ◽

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Crystal Orientation and Nitrogen Effects on the Carrier Mobility of p-Type Metal Oxide Semiconductor Field Effect Transistor with Ultra Thin Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.1520 ◽

2006 ◽

Vol 45 (3A) ◽

pp. 1520-1524

Author(s):

Yao-Jen Lee ◽

Pei-Tsang Ho ◽

Wen-Luh Yang ◽

Tien-Sheng Chao ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

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Strain Engineering of Nanoscale Si P-Type Metal-Oxide-Semiconductor Field-Effect Transistor Devices with SiGe Alloy Integrated with Contact-Etch-Stop Layer Stressors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.6278 ◽

2012 ◽

Vol 12 (7) ◽

pp. 5402-5406 ◽

Author(s):

Chang-Chun Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Strain Engineering ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Etch Stop ◽

Etch Stop Layer ◽

Effect Transistor ◽

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Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap

Applied Physics Letters ◽

10.1063/1.2819071 ◽

2007 ◽

Vol 91 (23) ◽

pp. 233505 ◽

Author(s):

R. Yang ◽

Y. Z. Xiong ◽

W. Y. Loh ◽

J. D. Ye ◽

M. B. Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Effect Transistor ◽

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An asymmetric Si/Si1−xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor

Solid-State Electronics ◽

10.1016/s0038-1101(01)00013-2 ◽

2001 ◽

Vol 45 (2) ◽

pp. 281-285 ◽

Author(s):

Xiangdong Chen ◽

Qiqing Ouyang ◽

Sankaran Kartik Jayanarayanan ◽

Freek E. Prins ◽

Sanjay Banerjee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

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