Fabrication and characterization of metal-insulator-semiconductor field effect transistors using sputtered silicon nitride film as a gate dielectric

International Journal of Electronics ◽

10.1080/00207219408926034 ◽

1994 ◽

Vol 77 (1) ◽

pp. 61-69 ◽

Author(s):

K. B. SUNDARAM ◽

S. S. SESHAN

Keyword(s):

Silicon Nitride ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Nitride Film ◽

Silicon Nitride Film ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization

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Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

physica status solidi (c) ◽

10.1002/pssc.201300290 ◽

2013 ◽

Vol 10 (11) ◽

pp. 1401-1404 ◽

Author(s):

Tuan Quy Nguyen ◽

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization ◽

Heterojunction Field Effect Transistors

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4810002 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232107 ◽

Author(s):

Choong Hyun Lee ◽

Tomonori Nishimura ◽

Toshiyuki Tabata ◽

DanDan Zhao ◽

Kosuke Nagashio ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Electrical properties of metal–HfO2–silicon system measured from metal–insulator–semiconductor capacitors and metal–insulator–semiconductor field–effect transistors using HfO2 gate dielectric

Microelectronics Reliability ◽

10.1016/j.microrel.2004.11.016 ◽

2005 ◽

Vol 45 (5-6) ◽

pp. 961-964 ◽

Author(s):

Fu-Chien Chiu ◽

Shun-An Lin ◽

Joseph Ya-min Lee

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

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Fabrication and Characterization of AlTiO/InAlN/AlN/GaN Metal-Insulator-Semiconductor Field-Effect Transistor

10.7567/ssdm.2015.m-2-6 ◽

2015 ◽

Author(s):

S. Yamaguchi ◽

T. Ui ◽

J. Liang ◽

H.A. Shih ◽

T. Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor ◽

Fabrication And Characterization

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The fabrication and characterization of metal-oxide semiconductor field-effect transistors and gated diodes using (Ba/sub 0.5/,Sr/sub 0.5)TiO/sub 3/ gate dielectric

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242773 ◽

2005 ◽

Author(s):

Yu-Rung Liu ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator

Applied Physics Letters ◽

10.1063/1.2186072 ◽

2006 ◽

Vol 88 (11) ◽

pp. 112117 ◽

Author(s):

Kazuyuki Hirama ◽

Shingo Miyamoto ◽

Hiroki Matsudaira ◽

Keisaku Yamada ◽

Hiroshi Kawarada ◽

...

Keyword(s):

Aluminum Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108079 ◽

2021 ◽

pp. 108079

Author(s):

Dong-Hyeok Son ◽

Terirama Thingujam ◽

Quan Dai ◽

Jeong-Gil Kim ◽

Sorin Cristoloveanu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Fabrication And Characterization

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3528334 ◽

2010 ◽

Vol 97 (25) ◽

pp. 253502 ◽

Author(s):

Yuji Urabe ◽

Masafumi Yokoyama ◽

Hideki Takagi ◽

Tetsuji Yasuda ◽

Noriyuki Miyata ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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