Basic Study on the Estimation of Medical Exposure Dose Using Monte Carlo Simulation

2008 ◽  
Vol 45 (sup5) ◽  
pp. 191-193 ◽  
Author(s):  
Yoichi Yamaguchi ◽  
Takashi Sasaki ◽  
Seiki Onishi ◽  
Mamoru Baba
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Exposure Dose ◽  
Basic Study ◽  
Medical Exposure

scholarly journals Simulation Study on Radiation Exposure of Emergency Medical Responders From Radioactively Contaminated Patients

2020 ◽  
Author(s):  
Takakiyo Tsujiguchi ◽  
Yoko Suzuki ◽  
Mizuki Sakamoto ◽  
Kazuki Narumi ◽  
Katsuhiro Ito ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Radiation Exposure ◽  
Exposure Dose ◽  
Radioactive Source ◽  
Anxiety Reduction ◽  
Radiation Doses ◽  
Emergency Medical ◽  
Radiation Emergency ◽  
Computational Phantoms

Abstract Emergency medical responders (EMRs), who save victims in a radiation emergency, are at risk of radiation exposure. In this study, the exposure dose to EMRs assisting contaminated patients was estimated using a Monte Carlo simulation, and will produce data that contributes to EMR education and anxiety reduction. Using the Monte Carlo simulation, we estimated radiation doses for adult computational phantoms with radioactive contamination conditions radiation dosages were based on findings from previous studies. At the contamination condition corresponding to the typical upper limit of general GM survey meters, the radiation doses of EMRs were estimated to be less than μSv per hour. In case of a heavier contamination due to mishandling of an intense radioactive source with hundreds of GBq or more, their radiation doses would be close to 100 mSv per hour. The results have implied that the radiological accident with a highly radioactive source would expose EMR to the risk of significant radiation exposure exceeding the dose limit. It is thus crucial that the authority or other party who are responsible for the health of EMRs ensures that they shall have necessary education and training on the effective measures for protecting themselves from the possible, excessive radiation exposure.

scholarly journals Simulation study on radiation exposure of emergency medical responders from radioactively contaminated patients

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Takakiyo Tsujiguchi ◽  
Yoko Suzuki ◽  
Mizuki Sakamoto ◽  
Kazuki Narumi ◽  
Katsuhiro Ito ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Radiation Exposure ◽  
Exposure Dose ◽  
Radioactive Source ◽  
Radiation Doses ◽  
Emergency Medical ◽  
Radiation Emergency ◽  
Appropriate Education ◽  
Computational Phantoms

AbstractEmergency medical responders (EMRs) who treat victims during a radiation emergency are at risk of radiation exposure. In this study, the exposure dose to EMRs treating hypothetically contaminated patients was estimated using a Monte Carlo simulation, and the findings may be useful for educating EMRs and reducing their anxiety. The Monte Carlo simulation estimated radiation doses for adult computational phantoms based on radioactive contamination conditions and radiation dosages from previous studies. At contamination conditions below the typical upper limit of general Geiger–Müller survey meters, the radiation doses to EMRs were estimated to be less than 1 μSv per hour. In cases with greater contamination due to mishandling of an intense radioactive source (hundreds of GBq), the radiation doses to EMRs could reach approximately 100 mSv per hour. These results imply that a radiological accident with a highly radioactive source could expose EMR to significant radiation that exceeds their dose limit. Thus, authorities and other parties should ensure that EMRs receive appropriate education and training regarding measures that can be taken to protect themselves from the possibility of excessive radiation exposure. The results of this study may provide EMRs with information to take appropriate protective measures, although it is also important that they not hesitate to perform lifesaving measures because of concerns regarding radiation.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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