On estimating stacking fault and twin boundary energies in simple metals from phonon dispersion data

1978 ◽  
Vol 37 (1) ◽  
pp. 147-149 ◽  
Author(s):  
Yousuke Watanabe
Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1696
Author(s):  
Hana Kriaa ◽  
Antoine Guitton ◽  
Nabila Maloufi

In a scanning electron microscope, the backscattered electron intensity modulations are at the origin of the contrast of like-Kikuchi bands and crystalline defects. The Electron Channeling Contrast Imaging (ECCI) technique is suited for defects characterization at a mesoscale with transmission electron microscopy-like resolution. In order to achieve a better comprehension of ECCI contrasts of twin-boundary and stacking fault, an original theoretical approach based on the dynamical diffraction theory is used. The calculated backscattered electron intensity is explicitly expressed as function of physical and practical parameters controlling the ECCI experiment. Our model allows, first, the study of the specimen thickness effect on the channeling contrast on a perfect crystal, and thus its effect on the formation of like-Kikuchi bands. Then, our theoretical approach is extended to an imperfect crystal containing a planar defect such as twin-boundary and stacking fault, clarifying the intensity oscillations observed in ECC micrographs.


1991 ◽  
Vol 43 (3) ◽  
pp. 2018-2024 ◽  
Author(s):  
Jian-hua Xu ◽  
W. Lin ◽  
A. J. Freeman

Author(s):  
L.E. Murr ◽  
R.J. Horylev

It has been recently shown that, as generally assumed, the coherent twin boundary free energy and the intrinsic stacking fault free energy in fee pure metals are approximately related by a factor of 2 at constant temperature, i. e.,In the case of pure metals, the temperature coefficient assumes a simple Gibbs form for a general interface (stacking fault or twin boundary):where S is the interfacial entropy per unit area of interface. It is noted in Eq. (2) that the temperature coefficient for an idealized pure metal is always negative. Thus, in the absence of interfacial adsorption of vacancies or impurities [assumed in Eq. (2)], the stacking fault and twin boundary free energies will increase with increasing temperature, and will be related by Eq. (1).In the case of multicomponent (alloy) systems, the temperature coefficient becomes a complex function of component entropy contributions, surface adsorption and desorption, and their temperature dependence:


Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3491
Author(s):  
Loay Elalfy ◽  
Denis Music ◽  
Ming Hu

The effect of compression on the thermal conductivity of CuGaS2, CuInS2, CuInTe2, and AgInTe2 chalcopyrites (space group I-42d) was studied at 300 K using phonon Boltzmann transport equation (BTE) calculations. The thermal conductivity was evaluated by solving the BTE with harmonic and third-order interatomic force constants. The thermal conductivity of CuGaS2 increases with pressure, which is a common behavior. Striking differences occur for the other three compounds. CuInTe2 and AgInTe2 exhibit a drop in the thermal conductivity upon increasing pressure, which is anomalous. AgInTe2 reaches a very low thermal conductivity of 0.2 W·m−1·K−1 at 2.6 GPa, being beneficial for many energy devices, such as thermoelectrics. CuInS2 is an intermediate case. Based on the phonon dispersion data, the phonon frequencies of the acoustic modes for CuInTe2 and AgInTe2 decrease with increasing pressure, thereby driving the anomaly, while there is no significant pressure effect for CuGaS2. This leads to the negative Grüneisen parameter for CuInTe2 and AgInTe2, a decreased phonon relaxation time, and a decreased thermal conductivity. This softening of the acoustic modes upon compression is suggested to be due to a rotational motion of the chalcopyrite building blocks rather than a compressive oscillation. The negative Grüneisen parameters and the anomalous phonon behavior yield a negative thermal expansion coefficient at lower temperatures, based on the Grüneisen vibrational theory.


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