Large Area Deposition of Polycrystalline Diamond Coatings by Microwave Plasma CVD

2013 ◽  
Vol 72 (4) ◽  
pp. 225-232 ◽  
Author(s):  
Awadesh K. Mallik ◽  
Sandip Bysakh ◽  
Kalyan S. Pal ◽  
Nandadulal Dandapat ◽  
Bichitra K. Guha ◽  
...  
2002 ◽  
Vol 11 (3-6) ◽  
pp. 596-600 ◽  
Author(s):  
Yutaka Ando ◽  
Yoshihiro Yokota ◽  
Takeshi Tachibana ◽  
Akihiko Watanabe ◽  
Yoshiki Nishibayashi ◽  
...  

2021 ◽  
Vol 116 ◽  
pp. 108394
Author(s):  
Justas Zalieckas ◽  
Paulius Pobedinskas ◽  
Martin Møller Greve ◽  
Kristoffer Eikehaug ◽  
Ken Haenen ◽  
...  

Vacuum ◽  
2018 ◽  
Vol 147 ◽  
pp. 134-142 ◽  
Author(s):  
J. Weng ◽  
F. Liu ◽  
L.W. Xiong ◽  
J.H. Wang ◽  
Q. Sun

2017 ◽  
Vol 75 ◽  
pp. 169-175 ◽  
Author(s):  
E.E. Ashkihazi ◽  
V.S. Sedov ◽  
D.N. Sovyk ◽  
A.A. Khomich ◽  
A.P. Bolshakov ◽  
...  

2003 ◽  
Vol 76 (6) ◽  
pp. 953-955 ◽  
Author(s):  
W.J. Zhang ◽  
C.Y. Chan ◽  
K.M. Chan ◽  
I. Bello ◽  
Y. Lifshitz ◽  
...  

1997 ◽  
Vol 113-114 ◽  
pp. 244-248 ◽  
Author(s):  
Hyeongmin Jeon ◽  
Akimitsu Hatta ◽  
Hidetoshi Suzuki ◽  
Toshimichi Ito ◽  
Takatomo Sasaki ◽  
...  

1998 ◽  
Vol 98 (1-3) ◽  
pp. 1079-1091 ◽  
Author(s):  
T. Grögler ◽  
E. Zeiler ◽  
A. Hörner ◽  
S.M. Rosiwal ◽  
R.F. Singer

1992 ◽  
Vol 242 ◽  
Author(s):  
L. M. Edwards ◽  
J. L. Davidson

ABSTRACTThe technology to fabricate polycrystalline diamond film resistors has been initiated using modified thick film patterning techniques and in situ solid source doping.Doping of polycrystalline diamond films in microwave plasma CVD systems has been achieved historically through use of diborane gas, which may contaminate the deposition system causing all diamond films thereafter to be doped p-type. We have attempted noncontaminating in situ doping utilizing two solid source dopants, and have met with preliminary success.The more effective source (B2O3) produces a fairly even dopant concentration across the substrate, with sheet resistances ranging from 800 ohms per square to 4500 ohms per square. The other source (BN) showed significant doping in a narrow band surrounding the source, but the doping concentration decreased rapidly with distance from the source. Films grown afterwards with no doping were evaluated through resistance measurements; no evidence of doping contamination was observed.


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