Interfacial defects in YBa2Cu3O7-δ/SrTiO3(0 0 1) heterostructures studied by aberration-corrected ultrahigh-resolution electron microscopy

2013 ◽  
Vol 93 (5) ◽  
pp. 264-272 ◽  
Author(s):  
Shao-Bo Mi
Keyword(s):  
Electron Microscopy ◽  
Ultrahigh Resolution ◽  
Resolution Electron ◽  
Interfacial Defects ◽  
Aberration Corrected

scholarly journals Real-space Measurements of Bonding Charge Density in Aberration-corrected High Resolution Electron Microscopy

2009 ◽  
Vol 15 (S2) ◽  
pp. 1478-1479
Author(s):  
J Ciston ◽  
SJ Haigh ◽  
JS Kim ◽  
AI Kirkland ◽  
LD Marks
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Charge Density ◽  
High Resolution Electron Microscopy ◽  
Real Space ◽  
Resolution Electron ◽  
Aberration Corrected

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Epitaxial Growth of Ii-Vi Semiconductors on Vicinal GaAs Surfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
G. Feuillet ◽  
J. Cibert ◽  
E. Ligeon ◽  
Y. Gobil ◽  
K. Saminadayar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Epitaxial Growth ◽  
Atomic Structure ◽  
Surface Preparation ◽  
High Resolution Electron Microscopy ◽  
Cutting Angle ◽  
Resolution Electron ◽  
Interfacial Defects

ABSTRACTWe demonstrate that the use of vicinal (001) GaAs surfaces allows twin suppression in M.B.E. grown (111) CdTe. High Resolution Electron Microscopy is used to investigate the atomic structure of and the defects present at the interfaces, as a function of cutting angle and surface preparation. A model is presented that takes into account possible coincidences of facets in CdTe and GaAs in order to explain twin suppression, layer misorientation and the type of interfacial defects.

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