Direct determination of atomic structure at the epitaxial cobalt disilicide on (111) Si interface by ultrahigh resolution electron microscopy

1982 ◽  
Vol 41 (9) ◽  
pp. 818-820 ◽  
Author(s):  
J. M. Gibson ◽  
J. C. Bean ◽  
J. M. Poate ◽  
R. T. Tung
Keyword(s):  
Electron Microscopy ◽  
Atomic Structure ◽  
Direct Determination ◽  
Cobalt Disilicide ◽  
Ultrahigh Resolution ◽  
Resolution Electron

High-resolution electron microscopy of the atomic structure of some grain boundaries in Au

1986 ◽  
Vol 44 ◽  
pp. 414-415
Author(s):  
W. Krakow ◽  
D. A. Smith
Keyword(s):  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Image Features ◽  
Image Feature ◽  
Resolution Electron ◽  
Tilt Boundaries ◽  
Processing Techniques ◽  
Atom Position ◽  
Structure Configuration

The successful determination of the atomic structure of [110] tilt boundaries in Au stems from the investigation of microscope performance at intermediate accelerating voltages (200 and 400kV) as well as a detailed understanding of how grain boundary image features depend on dynamical diffraction processes variation with specimen and beam orientations. This success is also facilitated by improving image quality by digital image processing techniques to the point where a structure image is obtained and each atom position is represented by a resolved image feature. Figure 1 shows an example of a low angle (∼10°) Σ = 129/[110] tilt boundary in a ∼250Å Au film, taken under tilted beam brightfield imaging conditions, to illustrate the steps necessary to obtain the atomic structure configuration from the image. The original image of Fig. 1a shows the regular arrangement of strain-field images associated with the cores of ½ [10] primary dislocations which are separated by ∼15Å.

Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 390-391
Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Medium Voltage ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Structural Image ◽  
Electron Microscopes ◽  
Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

Structure, Composition and Stability of Heterophase Boundaries

1997 ◽  
Vol 3 (S2) ◽  
pp. 673-674
Author(s):  
M. Rühle ◽  
T. Wagner ◽  
S. Bernath ◽  
J. Plitzko ◽  
C. Scheu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Elevated Temperatures ◽  
Analytical Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Advanced Materials ◽  
Bulk Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
The Stability

Heterophase boundaries play an important role in advanced materials since those materials often comprise different components. The properties of the materials depend strongly on the properties of the interface between the components. Thus, it is important to investigate the stability of the microstructure with respect to annealing at elevated temperatures. In this paper results will be presented on the structure and composition of the interfaces between Cu and (α -Al2O3. The interfaces were processed either by growing a thin Cu overlayer on α- Al2O3 in a molecular beam epitaxy (MBE) system or by diffusion bonding bulk crystals of the two constituents in an UHV chamber. To improve the adhesion of Cu to α -Al2O3 ultrathin Ti interlayers were deposited between Cu and α - Al2O3.Interfaces were characterized by different transmission electron microscopy (TEM) techniques. Quantitative high-resolution electron microscopy (QHRTEM) allows the determination of the structure (coordinates of atoms) while analytical electron microscopy (AEM) allows the determination of the composition with high spatial resolution.

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