Cold solid-phase welding in ultra-high vacuum and pure argon atmosphere

1991 ◽  
Vol 5 (10) ◽  
pp. 769-775
Author(s):  
S Kaihara ◽  
T Nakamura ◽  
T Murayama ◽  
T Irisawa ◽  
T Kono
1990 ◽  
Vol 8 (4) ◽  
pp. 515-521 ◽  
Author(s):  
Shoichiro Kaihara ◽  
Terumi Nakamura ◽  
Takehiro Murayama ◽  
Tosio Irisawa ◽  
Takesuke Kohno

1978 ◽  
Vol 45 ◽  
pp. 287-291 ◽  
Author(s):  
Y. Shiraki ◽  
Y. Katayama ◽  
K.L.I. Kobayashi ◽  
K.F. Komatsubara

2021 ◽  
Author(s):  
Héctor Carrascosa ◽  
Cristóbal González Díaz ◽  
Guillermo M. Muñoz Caro ◽  
Pedro C. Gómez ◽  
María Luz Sanz

<p>Hexamethylentetramine has drawn a lot of attention due to its potential to produce prebiotic species. This work aims to gain a better understanding in the chemical processes concerning methylamine under astrophysically relevant conditions. In particular, this work deeps into the formation of N-heterocycles in interstellar ice analogs exposed to UV radiation, which may lead to the formation of prebiotic species.</p> <p>Experimental simulations of interstellar ice analogs were carried out in ISAC. ISAC is an ultra-high vacuum chamber equipped with a cryostat, where gas and vapour species are frozen forming ice samples. Infrared and ultraviolet spectroscopy were used to monitor the solid phase, and quadrupole mass spectrometry served to measure the composition of the gas phase. The variety of species detected after UV irradiation of ices containing  methylamine revealed the presence of 12 species which have been already detected in the ISM, being 4 of them typically classified as complex organic molecules: formamide (HCONH<sub>2</sub>), methyl cyanide (CH<sub>3</sub>CN), CH<sub>3</sub>NH and CH<sub>3</sub>CHNH. Warming up of the irradiated CH<sub>3</sub>NH<sub>2</sub>-bearing ice samples lead to the formation of trimethylentriamine (TMT), a N-heterocycle precursor of HMT, and the subsequent synthesis of HMT at temperatures above 230 K.</p>


1984 ◽  
Vol 35 ◽  
Author(s):  
M. Tabe ◽  
Y. Kunii

ABSTRACTLateral solid phase epitaxy (L-SPE) of ultra-high-vacuum (UHV) deposited amorphous Si (a-Si) over patterned SiO2 has been studied to produce monocrystalline silicon-on-insulator (SOI) films. When employing UHV-deposited a-Si, it is essential for L-SPE to reduce step height at the pattern boundary. This is because low density a-Si including columnar voids is formed at the step wall by the self-shadowing effect and SPE region does not extend across the low density a-Si area. L-SPE growth distance of 7 μm was achieved by low temperature annealing (575°C, 20 hr) on a planar substrate with recessed SiO2 patterns. Another deposition technique of a-Si for SPE, i.e., chemical vapor deposition is reviewed for comparison.


2009 ◽  
Vol 78 (5) ◽  
pp. 497-498
Author(s):  
Kazuo HIRAOKA ◽  
Yoshinori HIRATA ◽  
Terumi NAKAMURA

2007 ◽  
Vol 76 (5) ◽  
pp. 415-416
Author(s):  
Kazuo HIRAOKA ◽  
Yoshinori HIRATA ◽  
Terumi NAKAMURA

1986 ◽  
Vol 74 ◽  
Author(s):  
H. C. Cheng ◽  
I. C. Wu ◽  
L. J. Chen

AbstractThe epitaxial growth of near noble silicides, including CoSi2, NiSi2, FeSi2, Pd2 Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi2 on (111)Si. The best NiSi2, FeSi2, Pd2 Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.


2011 ◽  
Vol 29 (3) ◽  
pp. 39s-42s ◽  
Author(s):  
Tsubasa KATAYAMA ◽  
Shinichi TASHIRO ◽  
Manabu TANAKA

2019 ◽  
Vol 89 (3) ◽  
pp. 460
Author(s):  
А.С. Агликов ◽  
Д.А. Кудряшов ◽  
А.М. Можаров ◽  
С.В. Макаров ◽  
А.Д. Большаков ◽  
...  

AbstractUse of inorganic oxides as transport layer material is a promising way to increase the efficiency of perovskite solar cells. Results of the studies of the influence of the gas mix composition in the plasma discharge used during magnetron sputtering on the optical, electrical, and structural parameters of deposited thin nickel oxide films are reported. Addition of oxygen or nitrogen to pure argon atmosphere (up to 30 vol %) was shown to change the growth rate (1.2–2.3 nm/min), resistivity of the samples (8.5–208 Ω cm), material band gap (2.85–3.43 eV), and the spectral dependence of the extinction coefficient, while the structural and morphological parameters of synthesized thin films were not affected. The lowest extinction coefficients were found in films deposited in pure argon atmosphere, which determines the capabilities of their usage in photovoltaic converters based on perovskite compounds.


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