Molecular beam and solid-phase epitaxies of silicon under ultra-high vacuum

1978 ◽  
Vol 45 ◽  
pp. 287-291 ◽  
Author(s):  
Y. Shiraki ◽  
Y. Katayama ◽  
K.L.I. Kobayashi ◽  
K.F. Komatsubara
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.


2021 ◽  
Author(s):  
Héctor Carrascosa ◽  
Cristóbal González Díaz ◽  
Guillermo M. Muñoz Caro ◽  
Pedro C. Gómez ◽  
María Luz Sanz

<p>Hexamethylentetramine has drawn a lot of attention due to its potential to produce prebiotic species. This work aims to gain a better understanding in the chemical processes concerning methylamine under astrophysically relevant conditions. In particular, this work deeps into the formation of N-heterocycles in interstellar ice analogs exposed to UV radiation, which may lead to the formation of prebiotic species.</p> <p>Experimental simulations of interstellar ice analogs were carried out in ISAC. ISAC is an ultra-high vacuum chamber equipped with a cryostat, where gas and vapour species are frozen forming ice samples. Infrared and ultraviolet spectroscopy were used to monitor the solid phase, and quadrupole mass spectrometry served to measure the composition of the gas phase. The variety of species detected after UV irradiation of ices containing  methylamine revealed the presence of 12 species which have been already detected in the ISM, being 4 of them typically classified as complex organic molecules: formamide (HCONH<sub>2</sub>), methyl cyanide (CH<sub>3</sub>CN), CH<sub>3</sub>NH and CH<sub>3</sub>CHNH. Warming up of the irradiated CH<sub>3</sub>NH<sub>2</sub>-bearing ice samples lead to the formation of trimethylentriamine (TMT), a N-heterocycle precursor of HMT, and the subsequent synthesis of HMT at temperatures above 230 K.</p>


1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.


2004 ◽  
Vol 16 (33) ◽  
pp. S3451-S3458 ◽  
Author(s):  
R Macovez ◽  
C Cepek ◽  
M Sancrotti ◽  
A Goldoni ◽  
L Petaccia ◽  
...  

1991 ◽  
Vol 5 (10) ◽  
pp. 769-775
Author(s):  
S Kaihara ◽  
T Nakamura ◽  
T Murayama ◽  
T Irisawa ◽  
T Kono

2002 ◽  
Vol 715 ◽  
Author(s):  
D. J. Lockwood ◽  
J.-M. Baribeau ◽  
M. Noël ◽  
J. C. Zwinkels ◽  
B. J. Fogal ◽  
...  

AbstractWe produce a novel form of amorphous silicon through ultra-high-vacuum molecular beam epitaxy. By depositing silicon atoms onto a fused quartz substrate at temperatures between 98 and 335°C, we obtain a silicon-based material that lacks the characteristic periodicity of crystalline silicon but nevertheless has 98% of its density. The impurity content of this material is studied through infrared and secondary ion mass spectroscopies. The primary impurity found is oxygen, with hydrogen and carbon atoms also being found at trace levels. The Raman spectra of the amorphous silicon films are measured and the results, as they relate to the presence of disorder, are interpreted. We also use this molecular beam epitaxy method to fabricate a number of amorphous silicon superlattices, comprised of thin layers of amorphous silicon separated with even thinner layers of SiO2. The optical properties of the films and superlattices are contrasted.


1984 ◽  
Vol 35 ◽  
Author(s):  
M. Tabe ◽  
Y. Kunii

ABSTRACTLateral solid phase epitaxy (L-SPE) of ultra-high-vacuum (UHV) deposited amorphous Si (a-Si) over patterned SiO2 has been studied to produce monocrystalline silicon-on-insulator (SOI) films. When employing UHV-deposited a-Si, it is essential for L-SPE to reduce step height at the pattern boundary. This is because low density a-Si including columnar voids is formed at the step wall by the self-shadowing effect and SPE region does not extend across the low density a-Si area. L-SPE growth distance of 7 μm was achieved by low temperature annealing (575°C, 20 hr) on a planar substrate with recessed SiO2 patterns. Another deposition technique of a-Si for SPE, i.e., chemical vapor deposition is reviewed for comparison.


1998 ◽  
Vol 9 (1-4) ◽  
pp. 437-444 ◽  
Author(s):  
R. Tubino ◽  
A. Borghesi ◽  
L. Dalla Bella ◽  
S. Destri ◽  
W. Porzio ◽  
...  

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