Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

High Electron ◽

Moderate Dose ◽

High Electron Mobility ◽

Radiation Effects in High Electron Mobility Transistors: Total Dose Gamma Irradiation

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1987.4337560 ◽

1987 ◽

Vol 34 (6) ◽

pp. 1808-1811 ◽

Cited By ~ 18

Author(s):

Michael J. O'Loughlin

Keyword(s):

Gamma Irradiation ◽

Total Dose ◽

Electron Mobility ◽

Radiation Effects ◽

High Electron ◽

High Electron Mobility ◽

Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Applied Physics Express ◽

10.7567/apex.7.095502 ◽

2014 ◽

Vol 7 (9) ◽

pp. 095502 ◽

Cited By ~ 4

Author(s):

Yuen-Yee Wong ◽

Edward Yi Chang ◽

Wei-Ching Huang ◽

Yueh-Chin Lin ◽

Yung-Yi Tu ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Growth Mode ◽

High Electron ◽

High Electron Mobility ◽

Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.111002 ◽

2009 ◽

Vol 48 (11) ◽

pp. 111002 ◽

Cited By ~ 9

Author(s):

Shuxin Tan ◽

Takaaki Suzue ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Growth Parameters ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7631 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7083-7088 ◽

Cited By ~ 2

Author(s):

Cong Wang ◽

Sung-Jin Cho ◽

Nam-Young Kim

Keyword(s):

Comparative Analysis ◽

Electrical Properties ◽

Electron Mobility ◽

Structural And Electrical Properties

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Nano Scale ◽

Electron Mobility Transistors ◽

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

Semiconductor Science and Technology ◽

10.1088/1361-6641/ac1563 ◽

2021 ◽

Author(s):

Shijie Pan ◽

Shiwei Feng ◽

Xuan Li ◽

Xiang Zheng ◽

Xiaozhuang Lu ◽

...

Keyword(s):

Gamma Irradiation ◽

Electron Mobility ◽

High Electron ◽

Transient Method ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Voltage Transient

Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2012.1410 ◽

2012 ◽

Vol 4 (9) ◽

pp. 944-947

Author(s):

Jiangfeng Du ◽

Xinchuan Zhang ◽

Zhihong Feng ◽

Shaobo Dun ◽

Ziqi Zhao ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron ◽

Short Channel Effects ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Channel Effects

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Electrical properties of molecular beam epitaxially grown Al[sub x]Ga[sub 1−x]Sb[sub y]As[sub 1−y] and its application in InP-based high electron mobility transistors

10.1116/1.1376382 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1529 ◽

Cited By ~ 2

Author(s):

W. Z. Cai ◽

N. T. Moshegov ◽

T. S. Mayer ◽

D. L. Miller

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures

Applied Physics Letters ◽

10.1063/1.3263955 ◽

2009 ◽

Vol 95 (20) ◽

pp. 203504 ◽

Cited By ~ 20

Author(s):

F. González-Posada Flores ◽

C. Rivera ◽

E. Muñoz

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Strain State ◽

High Electron ◽

High Electron Mobility ◽

Effect of Gamma Irradiation on DC Performance of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors

ECS Transactions ◽

10.1149/06104.0205ecst ◽

2014 ◽

Vol 61 (4) ◽

pp. 205-210

Author(s):

Y.-H. Hwang ◽

Y.-L. Hsieh ◽

L. Lei ◽

S. Li ◽

F. Ren ◽

...

Keyword(s):

Gamma Irradiation ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Cathodoluminescence Studies of Gamma-Irradiation Effects on AlGaN/GaN High Electron Mobility Transistors (HEMTs)

ECS Meeting Abstracts ◽

10.1149/ma2015-02/33/1224 ◽

2015 ◽

Keyword(s):

Gamma Irradiation ◽

Electron Mobility ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽