The Magnetic Properties of L10-FePt Thin Film with Perpendicular Anisotropy

AbstractSynthetic antiferromagnetic (SAF) particles with perpendicular anisotropy display a number of desirable characteristics for applications in biological and other fluid environments. We present an efficient and effective method for the patterning of ultrathin Ruderman-Kittel-Kasuya-Yoshida coupled, perpendicularly magnetised SAFs using a combination of nanosphere lithography and ion milling. A Ge sacrificial layer is utilised, which provides a clean and simple lift-off process, as well as maintaining the key magnetic properties that are beneficial to target applications. We demonstrate that the method is capable of producing a particularly high yield of well-defined, thin film based nanoparticles.

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Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

Physical Review B ◽

10.1103/physrevb.102.214402 ◽

2020 ◽

Vol 102 (21) ◽

Author(s):

Stephan Geprägs ◽

Björn Erik Skovdal ◽

Monika Scheufele ◽

Matthias Opel ◽

Didier Wermeille ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetic Properties ◽

Film Thickness ◽

Epitaxial Thin Films ◽

Thin Film Thickness ◽

Precise Control

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Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽

10.1557/adv.2016.544 ◽

2016 ◽

Vol 1 (37) ◽

pp. 2635-2640 ◽

Cited By ~ 5

Author(s):

Adele Moatti ◽

Reza Bayati ◽

Srinivasa Rao Singamaneni ◽

Jagdish Narayan

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetic Properties ◽

Frequency Factor ◽

Misfit Strain ◽

Buffer Layers ◽

Intrinsic Defects ◽

Domain Matching Epitaxy ◽

Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

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