Magnetic properties of nanocrystalline iron group thin film alloys electrodeposited from sulfate and chloride baths

2003 ◽  
Vol 48 (7) ◽  
pp. 819-830 ◽  
Author(s):  
Daheum Kim ◽  
D.-Y. Park ◽  
B.Y. Yoo ◽  
P.T.A. Sumodjo ◽  
N.V. Myung
Nano Research ◽  
2021 ◽  
Author(s):  
Emma N. Welbourne ◽  
Tarun Vemulkar ◽  
Russell P. Cowburn

AbstractSynthetic antiferromagnetic (SAF) particles with perpendicular anisotropy display a number of desirable characteristics for applications in biological and other fluid environments. We present an efficient and effective method for the patterning of ultrathin Ruderman-Kittel-Kasuya-Yoshida coupled, perpendicularly magnetised SAFs using a combination of nanosphere lithography and ion milling. A Ge sacrificial layer is utilised, which provides a clean and simple lift-off process, as well as maintaining the key magnetic properties that are beneficial to target applications. We demonstrate that the method is capable of producing a particularly high yield of well-defined, thin film based nanoparticles.


2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.


2011 ◽  
Vol 37 (5) ◽  
pp. 408-411 ◽  
Author(s):  
E. E. Shalygina ◽  
A. V. Agaponova ◽  
O. N. Tarakanov ◽  
I. A. Ryzhikov ◽  
A. N. Shalygin

2017 ◽  
Vol 49 (1) ◽  
pp. 73-79
Author(s):  
Jelena Potocnik ◽  
Milos Nenadovic ◽  
Bojan Jokic ◽  
Maja Popovic ◽  
Zlatko Rakocevic

In this work, Glancing Angle Deposition technique was used for obtaining nanostructured nickel thin film with vertical posts on glass substrate which was positioned 75 degrees with respect to the substrate normal and rotated with a suitable constant speed. The obtained nickel thin film was characterized by Scanning Electron Microscopy, Atomic Force Microscopy and X-ray Photoelectron Spectroscopy. It was found that the deposited thin film consists of 94.0 at.% of nickel. Magnetic properties of the deposited thin film were determined by Magneto-Optical Kerr Effect Microscopy. According to the obtained coercivity values, it can be concluded that the nickel thin film shows uniaxial magnetic anisotropy.


2015 ◽  
Vol 27 (24) ◽  
pp. 245602 ◽  
Author(s):  
S E Harrison ◽  
L J Collins-McIntyre ◽  
S-L Zhang ◽  
A A Baker ◽  
A I Figueroa ◽  
...  

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