Influence of Zr/Sn ratio on the Transverse Piezoelectric Coefficient [Inline formula] in Lanthanum-Doped Lead Zirconate Titanate Stannate Thin Films

2019 ◽  
Vol 201 (1) ◽  
pp. 86-93
Author(s):  
S. Laxmi Priya ◽  
V. Kumar ◽  
Isaku Kanno
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ternary System ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Structural Studies ◽  
Piezoelectric Characteristics

In this study, we report the effect of Zr/Sn ratio on the Antiferroelectric (AFE) → Ferroelectric (FE) phase transition and transverse piezoelectric characteristics on AFE thin films of compositions having the general formula Pb0.97La0.02(Zr1-x+ySnxTiy)O3, where y = 0.10 and 0.10 ≤ x ≤ 0.15 along the phase boundary in the ternary system Pb(Zr0.50Ti0.50)O3-Pb(Zr0.50Sn0.50)O3-PbZrO3. Thin films having a thickness of 2.0 µm were fabricated on platinised silicon substrates by sol–gel method. Data obtained from dielectric, ferroelectric and structural studies have been combined to explain the mechanism of AFE → FE switching.

The Influence of Film Thickness on the Magnitude and Aging Behavior of the Transverse Piezoelectric Coefficient (d31) of PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
J. F. Shepard ◽  
F. Chu ◽  
P. J. Moses ◽  
S. Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Sol Gel ◽  
Pressure Oscillation ◽  
Lead Zirconate ◽  
Biaxial Stress ◽  
Charge Detection ◽  
Electronic Pressure ◽  
Lock In

The wafer flexure technique has been developed for the rapid measurement (less than 10 minutes) of the d31 coefficient of piezoelectric thin films. The technique is based upon the controlled bending of a clamped silicon substrate coated with a thin piezoelectric film. Flexure of the wafer results in the transfer of biaxial stress from the silicon to the film, and thus the production of an electric charge. The charge produced is used in conjunction with the applied principle stresses to determine the film's transverse piezoelectric coefficient (d31). For this study, the wafer flexure technique was modified from semi-ac operation to a mechanized ac measurement (i.e. electronic pressure oscillation and lock-in charge detection). Modifications made reduce electromagnetic noise and enhance both the resolution and precision of the device. The system was used to characterize the piezoelectric properties of lead zirconate titanate 52/48 thin films between 0.6 and 2.5 μm thick synthesized using a modified sol-gel technique. The transverse piezoelectric constants (d31) of the PZT films were found to range from −60 to −90 pC/N for the 0.6 and 2.5 μm films, respectively. Aging experiments of the d31; coefficients were also conducted and results showed values to be on the order of 4 to 8% per decade.

A Technique for the Measurement of d31 Coefficient of Piezoelectric Thin Films

1996 ◽  
Vol 459 ◽  
Author(s):  
Joseph F. Shepard ◽  
Paul J. Moses ◽  
Susan Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Uniform Load ◽  
Poling Field ◽  
Piezoelectric Thin Films ◽  
Pzt Film ◽  
A New Technique

ABSTRACTThis paper describes a new technique by which the d31 coefficient of piezoelectric thin films can be characterized. Silicon substrates coated with lead-zirconate titanate (PZT) are flexed while clamped in a uniform load rig. When stressed, the PZT film produces an electric charge which is monitored together with the change in applied load. The mechanical stress and thus the transverse piezoelectric coefficient can then be calculated. Experiments were conducted as a function of poling field strength and poling time. Results are dependent upon the value of applied stress, which itself is dependent upon the mechanical properties of the silicon substrate. Because the substrate is anisotropie, limiting d31 values were calculated. In general, d31 was found to be ∼20 pC/N for field strengths above 130 kV/cm and poling times of less than 1 minute, d31 was increased more than a factor of three, to ∼77 pC/N, when poled at 200 kV/cm for ∼21 hours.

Measurement of Effective Longitudinal Piezoelectric Coefficient of thin Films by Direct Piezoelectric Effect

1997 ◽  
Vol 493 ◽  
Author(s):  
F. Xu ◽  
F. Chu ◽  
J. F. Shepard ◽  
S. Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Piezoelectric Effect ◽  
Sol Gel ◽  
Uniaxial Stress ◽  
Lead Zirconate ◽  
Direct Piezoelectric Effect ◽  
Piezoelectric Thin Film ◽  
A Charge

ABSTRACTThis paper presents a new method for the measurement of the longitudinal piezoelectric coefficient of piezoelectric thin films using the direct piezoelectric effect. A uniform uniaxial stress was applied to the piezoelectric thin film by high-pressure gas and the induced charge was collected and measured by a charge integrator. The effective longitudinal piezoelectric coefficient of lead zirconate titanate (PZT) 52/48 thin films made by sol-gel processing was measured by this method. Undoped films typically have d33 values of ∼ 5 pC/N, while poled films have values up to 220 pC/N.

Early Stages of Crystallization of Sol−Gel-Derived Lead Zirconate Titanate Thin Films

2003 ◽  
Vol 15 (5) ◽  
pp. 1147-1155 ◽  
Author(s):  
A. Wu ◽  
P. M. Vilarinho ◽  
I. Reaney ◽  
I. M. Miranda Salvado
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Early Stages ◽  
Zirconate Titanate

scholarly journals Interfacial mechanisms controlling phase formation in sol-gel derived lead zirconate titanate thin films

1994 ◽  
Vol 17 (6) ◽  
pp. 1005-1014 ◽  
Author(s):  
S B Majumder ◽  
V N Kulkarni ◽  
Y N Mohapatra ◽  
D C Agrawal
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Zirconate Titanate

Densification and enhanced polarisation in lead zirconate titanate sol–gel thin films

2009 ◽  
Vol 113 (1) ◽  
pp. 135-139 ◽  
Author(s):  
Anirban Chowdhury ◽  
Mikael A. Khan ◽  
Craig James ◽  
Steven J. Milne
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Zirconate Titanate

Island Structured Dielectric Thin Films by Scalable Self-Assembly

2010 ◽  
Vol 1253 ◽  
Author(s):  
Sharath Sriram ◽  
Madhu Bhaskaran ◽  
Arnan Mitchell
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Self Assembly ◽  
Complex Oxide ◽  
Lead Zirconate ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Preferential Growth ◽  
Dielectric Thin Films ◽  
Complex Chemistry

AbstractA self-assembly driven process to synthesize island-structured dielectric films is presented. An intermetallic reaction in platinized silicon substrates provides preferential growth sites for the complex oxide dielectric (strontium-doped lead zirconate titanate) layer. Microscopy and spectroscopy analyses have been used to propose a mechanism for this structuring process. This provides a simple and scalable process to synthesize films with increased surface area for sensors, especially those materials with a complex chemistry.

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