Island Structured Dielectric Thin Films by Scalable Self-Assembly

2010 ◽  
Vol 1253 ◽  
Author(s):  
Sharath Sriram ◽  
Madhu Bhaskaran ◽  
Arnan Mitchell
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Self Assembly ◽  
Complex Oxide ◽  
Lead Zirconate ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Preferential Growth ◽  
Dielectric Thin Films ◽  
Complex Chemistry

AbstractA self-assembly driven process to synthesize island-structured dielectric films is presented. An intermetallic reaction in platinized silicon substrates provides preferential growth sites for the complex oxide dielectric (strontium-doped lead zirconate titanate) layer. Microscopy and spectroscopy analyses have been used to propose a mechanism for this structuring process. This provides a simple and scalable process to synthesize films with increased surface area for sensors, especially those materials with a complex chemistry.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Pulsed excimer laser deposition and characterization of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

1992 ◽  
Vol 7 (9) ◽  
pp. 2521-2529 ◽  
Author(s):  
D. Roy ◽  
S.B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Lead Zirconate Titanate ◽  
Fatigue Behavior ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Excimer Laser Ablation ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films were prepared by excimer laser ablation on platinum coated silicon substrates. The composition of the films showed dependence on the fluence at low energy densities (<2 J/cm2), and less dependence on the ablation fluence was observed beyond a fluence of 2 J/cm2. A correlation among the fluence, ablation pressure, and substrate temperature has been established. Crystalline perovskite PZT films showed a dielectric constant of 800–1000, a remnant polarization of 32 μC/cm2, and a coercive field of 130 kV/cm. Films showed fatigue behavior that may be used in a device, and a close comparison of fatigue behavior between the films deposited at different energy densities indicated a better fatigue behavior for a fluence of 4 J/cm2.

A Technique for the Measurement of d31 Coefficient of Piezoelectric Thin Films

1996 ◽  
Vol 459 ◽  
Author(s):  
Joseph F. Shepard ◽  
Paul J. Moses ◽  
Susan Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Uniform Load ◽  
Poling Field ◽  
Piezoelectric Thin Films ◽  
Pzt Film ◽  
A New Technique

ABSTRACTThis paper describes a new technique by which the d31 coefficient of piezoelectric thin films can be characterized. Silicon substrates coated with lead-zirconate titanate (PZT) are flexed while clamped in a uniform load rig. When stressed, the PZT film produces an electric charge which is monitored together with the change in applied load. The mechanical stress and thus the transverse piezoelectric coefficient can then be calculated. Experiments were conducted as a function of poling field strength and poling time. Results are dependent upon the value of applied stress, which itself is dependent upon the mechanical properties of the silicon substrate. Because the substrate is anisotropie, limiting d31 values were calculated. In general, d31 was found to be ∼20 pC/N for field strengths above 130 kV/cm and poling times of less than 1 minute, d31 was increased more than a factor of three, to ∼77 pC/N, when poled at 200 kV/cm for ∼21 hours.

scholarly journals Properties of Piezoelectric Pzt Thin Films for Microactuator Applications

1994 ◽  
Vol 360 ◽  
Author(s):  
D. Damjanovic ◽  
K. G. Brooks ◽  
A. Kholkin ◽  
M. Kohli ◽  
T. Maeder ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Permittivity ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Silicon Substrates ◽  
Pzt Thin Films ◽  
Geometrical Constraints

AbstractThe piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the piezoelectric response is discussed. The study of the dielectric permittivity and the loss as a function of the amplitude of the alternating electric field reveals that extrinsic contributions to the dielectric permittivity become active at large fields. The DC electric field has the effect of freezing out the extrinsic contributions. The influence of the dielectric loss on the piezoelectric properties is discussed.

Influence of Zr/Sn ratio on the Transverse Piezoelectric Coefficient [Inline formula] in Lanthanum-Doped Lead Zirconate Titanate Stannate Thin Films

2019 ◽  
Vol 201 (1) ◽  
pp. 86-93
Author(s):  
S. Laxmi Priya ◽  
V. Kumar ◽  
Isaku Kanno
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ternary System ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Structural Studies ◽  
Piezoelectric Characteristics

In this study, we report the effect of Zr/Sn ratio on the Antiferroelectric (AFE) → Ferroelectric (FE) phase transition and transverse piezoelectric characteristics on AFE thin films of compositions having the general formula Pb0.97La0.02(Zr1-x+ySnxTiy)O3, where y = 0.10 and 0.10 ≤ x ≤ 0.15 along the phase boundary in the ternary system Pb(Zr0.50Ti0.50)O3-Pb(Zr0.50Sn0.50)O3-PbZrO3. Thin films having a thickness of 2.0 µm were fabricated on platinised silicon substrates by sol–gel method. Data obtained from dielectric, ferroelectric and structural studies have been combined to explain the mechanism of AFE → FE switching.

scholarly journals Microstructural and Compositional Analysis of Strontium-Doped Lead Zirconate Titanate Thin Films on Gold-Coated Silicon Substrates

2009 ◽  
Vol 15 (1) ◽  
pp. 30-35 ◽  
Author(s):  
S. Sriram ◽  
M. Bhaskaran ◽  
D.R.G. Mitchell ◽  
K.T. Short ◽  
A.S. Holland ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Secondary Ion Mass Spectrometry ◽  
Eutectic Point ◽  
Compositional Analysis ◽  
Lead Zirconate ◽  
Columnar Structure ◽  
Silicon Substrates ◽  
Tem Analysis ◽  
Zirconate Titanate

AbstractThis article discusses the results of transmission electron microscopy (TEM)-based characterization of strontium-doped lead zirconate titanate (PSZT) thin films. The thin films were deposited by radio frequency magnetron sputtering at 300°C on gold-coated silicon substrates, which used a 15 nm titanium adhesion layer between the 150 nm thick gold film and (100) silicon. The TEM analysis was carried out using a combination of high-resolution imaging, energy filtered imaging, energy dispersive X-ray (EDX) analysis, and hollow cone illumination. At the interface between the PSZT films and gold, an amorphous silicon-rich layer (about 4 nm thick) was observed, with the film composition remaining uniform otherwise. The films were found to be polycrystalline with a columnar structure perpendicular to the substrate. Interdiffusion between the bottom metal layers and silicon was observed and was confirmed using secondary ion mass spectrometry. This occurs due to the temperature of deposition (300°C) being close to the eutectic point of gold and silicon (363°C). The diffused regions in silicon were composed primarily of gold (analyzed by EDX) and were bounded by (111) silicon planes, highlighted by the triangular diffused regions observed in the two-dimensional TEM image.

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