A Technique for the Measurement of d31 Coefficient of Piezoelectric Thin Films

1996 ◽  
Vol 459 ◽  
Author(s):  
Joseph F. Shepard ◽  
Paul J. Moses ◽  
Susan Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Uniform Load ◽  
Poling Field ◽  
Piezoelectric Thin Films ◽  
Pzt Film ◽  
A New Technique

ABSTRACTThis paper describes a new technique by which the d31 coefficient of piezoelectric thin films can be characterized. Silicon substrates coated with lead-zirconate titanate (PZT) are flexed while clamped in a uniform load rig. When stressed, the PZT film produces an electric charge which is monitored together with the change in applied load. The mechanical stress and thus the transverse piezoelectric coefficient can then be calculated. Experiments were conducted as a function of poling field strength and poling time. Results are dependent upon the value of applied stress, which itself is dependent upon the mechanical properties of the silicon substrate. Because the substrate is anisotropie, limiting d31 values were calculated. In general, d31 was found to be ∼20 pC/N for field strengths above 130 kV/cm and poling times of less than 1 minute, d31 was increased more than a factor of three, to ∼77 pC/N, when poled at 200 kV/cm for ∼21 hours.

Influence of Zr/Sn ratio on the Transverse Piezoelectric Coefficient [Inline formula] in Lanthanum-Doped Lead Zirconate Titanate Stannate Thin Films

2019 ◽  
Vol 201 (1) ◽  
pp. 86-93
Author(s):  
S. Laxmi Priya ◽  
V. Kumar ◽  
Isaku Kanno
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ternary System ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Structural Studies ◽  
Piezoelectric Characteristics

In this study, we report the effect of Zr/Sn ratio on the Antiferroelectric (AFE) → Ferroelectric (FE) phase transition and transverse piezoelectric characteristics on AFE thin films of compositions having the general formula Pb0.97La0.02(Zr1-x+ySnxTiy)O3, where y = 0.10 and 0.10 ≤ x ≤ 0.15 along the phase boundary in the ternary system Pb(Zr0.50Ti0.50)O3-Pb(Zr0.50Sn0.50)O3-PbZrO3. Thin films having a thickness of 2.0 µm were fabricated on platinised silicon substrates by sol–gel method. Data obtained from dielectric, ferroelectric and structural studies have been combined to explain the mechanism of AFE → FE switching.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Research of the PZT Polarization for Deformable Mirror

2014 ◽  
Vol 609-610 ◽  
pp. 1331-1335
Author(s):  
Jun Jie Chen ◽  
Ying Liu ◽  
Jian Qiang Ma ◽  
Ji Cong Deng ◽  
Bao Qing Li ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
Deformable Mirror ◽  
Pzt Film ◽  
Zirconate Titanate

This paper demonstrates that the deformation of the piezoelectric deformable mirror (DM) is proportional to the transverse piezoelectric coefficient of the lead zirconate titanate (PZT) by the theoretical analysis. The optimal polarization conditions were obtained by experiments to optimize the performance of the DM. After the optimal polarization, the transverse piezoelectric coefficient of the PZT film increases from 350 pm/V to 431 pm/V, which will improve the deformation of the DM.

PZT Thin Films on Silicon Substrates: Formation and Research of Properties

2020 ◽  
Vol 28 ◽  
pp. 65-70 ◽  
Author(s):  
Victor V. Petrov ◽  
Yuriy N. Varzarev ◽  
Anton S. Kamentsev ◽  
Andrey A. Rozhko ◽  
Oksana A. Pakhomova
Keyword(s):  
Lead Zirconate Titanate ◽  
Test Bench ◽  
Surface States ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Ferroelectric Films ◽  
Pzt Film ◽  
Structure Morphology ◽  
Pzt Films ◽  
Electrophysical Parameters

In this paper, we consider the technological features of the formation of thin ferroelectric films of lead zirconate titanate (PZT) by the method of plasma high-frequency reactive sputtering. The crystal structure, morphology and elemental composition of films deposited on silicon and oxidized silicon substrates are investigated. It is shown that the obtained PZT films have a perovskite structure and are polycrystalline with a predominant crystallite growth in the (110) direction. An automated test bench has been designed and manufactured for measuring the electrophysical parameters of ferroelectric films. The measured CV characteristics of the Ni/PZT/Si structure show the hysteresis caused by the polarization of the PZT film. It is noted that the asymmetry of the dependence of the spontaneous polarization on the applied voltage can be caused by the presence of surface states at the PZT/Si interface.

Island Structured Dielectric Thin Films by Scalable Self-Assembly

2010 ◽  
Vol 1253 ◽  
Author(s):  
Sharath Sriram ◽  
Madhu Bhaskaran ◽  
Arnan Mitchell
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Self Assembly ◽  
Complex Oxide ◽  
Lead Zirconate ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Preferential Growth ◽  
Dielectric Thin Films ◽  
Complex Chemistry

AbstractA self-assembly driven process to synthesize island-structured dielectric films is presented. An intermetallic reaction in platinized silicon substrates provides preferential growth sites for the complex oxide dielectric (strontium-doped lead zirconate titanate) layer. Microscopy and spectroscopy analyses have been used to propose a mechanism for this structuring process. This provides a simple and scalable process to synthesize films with increased surface area for sensors, especially those materials with a complex chemistry.

Electrode Contacts on PZT Thin Films and Their Influence on Fatigue Properties

1994 ◽  
Vol 361 ◽  
Author(s):  
J.J. Lee ◽  
C.L. Thio ◽  
M. Bhattacharya ◽  
S.B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Permittivity ◽  
Lead Zirconate Titanate ◽  
Interfacial Layer ◽  
Ruthenium Oxide ◽  
Lead Zirconate ◽  
Fatigue Properties ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Metal Organic

ABSTRACTThe degradation (fatigue) of dielectric properties of ferroelectric PZT (Lead Zirconate Titanate) thin films during cycling was investigated. PZT thin films were fabricated by metal-organic decomposition (MOD). Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT and RuO2/PZT interfaces was determined from the thickness dependence of low-field dielectric permittivity (εr) measurements. It was observed that a low εrlayer existed at the Pt/PZT interface but not at the RuO2/PZT interface. The dielectric permittivity of this interfacial layer degrades with increasing fatigue while the εrof the bulk PZT film remains constant. This indicates that fatigue increases the interfacial layer thickness but does not change the bulk properties. For the capacitors with RuO2/PZT/RuO2 structure, however, the εdoes not change with thickness and fatigue cycling. This implies no interfacial layer exists between RuO2/PZT and, therefore, no fatigue was observed. Additionally, an impedance spectroscopie technique has been proposed for possible use in analyzing the nature of the interfacial layer during the fatigue process.

Effect of Polarization on the Microstructure and Piezoelectric Properties of PZT-Cement Composites

2008 ◽  
Vol 55-57 ◽  
pp. 381-384 ◽  
Author(s):  
Arnon Chaipanich ◽  
Nittaya Jaitanong
Keyword(s):  
Portland Cement ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Piezoelectric Properties ◽  
Lead Zirconate ◽  
Cement Composites ◽  
Poling Field ◽  
Polarization Condition ◽  
Zirconate Titanate ◽  
The Ideal

Lead zirconate titanate (PZT)-Portland cement (PC) composites were produced and successfully poled at different poling field and time. The effect of polarization on the microstructure and piezoelectric properties were then investigated. It was found that, at a fixed poling field up to 2 kV/mm, the piezoelectric coefficient (d33) was found to increase with poling time. The optimum poling time was found at 45 minutes where d33 value is 42 pC/N. The optimum and most practical poling field found for the composite was at 2 kV/mm. Lower poling field would give the composite lower piezoelectricity and poling field that is too high would result to breakdown of samples. Therefore, from these results, a poling field of 2 kV/mm at 45 minutes would be the ideal polarization condition used in poling PZT-PC composites.

Oxygen transport during annealing of Pb(Zr,Ti)O3 thin films in O2 gas and its effect on their conductivity

2001 ◽  
Vol 16 (10) ◽  
pp. 3005-3008 ◽  
Author(s):  
F. Ayguavives ◽  
B. Agius ◽  
B. EaKim ◽  
I. Vickridge
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Low Leakage ◽  
Pzt Film ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Current Densities

Lead zirconate titanate (PZT) thin films were deposited in a reactive argon/oxygen gas mixture by radio-frequency-magnetron sputtering. The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using oxygen 18 as a tracer, to study the oxygen diffusion in the thin films. Electrical properties and crystallization were optimized with a 90-nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550 °C) show very low leakage current densities (J = 2 × 10−8 A/cm2 at 1 V). In this article we show that a strong correlation exists between the oxygen composition in the PZT film and the leakage current density.

Piezoelectric Properties of Sol-Gel Derived PZT Thin Films with Various Zr/Ti Ratios

1997 ◽  
Vol 493 ◽  
Author(s):  
G. Teqwee ◽  
K. C. McCarthy ◽  
F. S. McCarthy ◽  
D. G. Davis ◽  
J. T. Dawley ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Single Phase ◽  
Piezoelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Piezoelectric Thin Films ◽  
Microelectromechanical Devices ◽  
Acoustic Wave Devices ◽  
Optical Lever

ABSTRACTPiezoelectric thin films are useful for application in microelectromechanical devices. A series of sol-gel derived PZT (lead zirconate titanate) thin films with various Zr/Ti ratios were prepared on platinized substrates. These films were fired to 650C - 700C to crystallize them into single-phase perovskite films, and their piezoelectric properties were measured using optical lever-based instrumentation. Large d33 piezoelectric coefficients up to 400 pm/V were obtained at the morphotropic phase boundary (PZT 53/47), making such films attractive in applications such as thin film transducers, microcanti levers and surface acoustic wave devices.

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