Effect of heat-treatment on LaNiO3film electrode of PZT thin films derived by a sol–gel method

2004 ◽  
Vol 15 (11) ◽  
pp. 739-742 ◽  
Author(s):  
Wei Lu ◽  
Ping Zheng ◽  
Wenjuan Du ◽  
Zhongyan Meng
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

Device effects of various Zr/Ti ratios of PZT thin-films prepared by sol-gel method

1992 ◽  
Vol 1 (2-4) ◽  
pp. 293-304 ◽  
Author(s):  
H. Watanabe ◽  
T. Mihara ◽  
C. A. Paz De Araujo
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Effects of cooling rate and post-heat treatment on properties of ZnO thin films deposited by sol–gel method

2011 ◽  
Vol 257 (21) ◽  
pp. 9019-9023 ◽  
Author(s):  
Min Su Kim ◽  
Kwang Gug Yim ◽  
Dong-Yul Lee ◽  
Jin Soo Kim ◽  
Jong Su Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Cooling Rate ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Post Heat Treatment ◽  
Gel Method ◽  
Sol Gel Method

The effect of heat treatment in the reducing atmosphere on the physical properties of TiO2 thin films prepared by sol–gel method

2013 ◽  
Vol 67 (2) ◽  
pp. 236-243 ◽  
Author(s):  
Maryam Sadat Ghorashi ◽  
Azarmidokht Hosseinnia ◽  
Fereydoun Alikhani Hessari ◽  
Yadolah Ganjkhanlou
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Physical Properties ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Reducing Atmosphere

scholarly journals Effect of Prebaking Temperature on Structure and Ferroelectric Properties of PZT Thin Films Prepared by Sol-Gel Method

1996 ◽  
Vol 64 (11) ◽  
pp. 1166-1173
Author(s):  
Sachiko ONO ◽  
Masakatsu MAEDA ◽  
Tetsuya OSAKA ◽  
Ichiro KOIWA ◽  
Takao KANEHIRA ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Preparation of Al Doped PZT Thin Films Using a Sol-Gel Method

1999 ◽  
Vol 596 ◽  
Author(s):  
T. Iijima ◽  
N. Sanada ◽  
K. Hiyama ◽  
H Tsuboi ◽  
M. Okada
Keyword(s):  
Thin Films ◽  
Cell Structure ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Reduction Rate ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Al Content ◽  
Capacitor Cell

AbstractAl substitution for Zr/Ti site of PZT was attempted using a sol-gel method, and the ferroelectric properties of 200nm-thick Al doped PZT thin films were compared with those of non- doped PZT film. The leakage current of the thin films decreased with increasing Al content. Ps and Pr also decreased with increasing Al content, whereas Ec did not show a significant change. Furthermore, a simple capacitor cell structure like FeRAM was prepared using a seed layer process. The capacitor structure was Pb(Ti0.975Al0.025)O3/ Pb1.1((Zr0.52Ti0.48)0. 975Al0.025)O3/ Pb(Ti0.975Al0.025)O3, and 2Pr was 26μC/cm2. The fatigue properties of the A1 doped PZT capacitor cell showed a little improvement, because the reduction rate of the fatigue was smaller than that of non-doped PZT thin film.

Origin of Leakage Current of YMnO3 Thin Films Prepared by the Sol-Gel Method

1999 ◽  
Vol 596 ◽  
Author(s):  
Hiroya Kitahata ◽  
Kiyoharu Tadanaga ◽  
Tsutomu Minami ◽  
Norifumi Fujimura ◽  
Taichiro Ito
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Leakage Current ◽  
Sol Gel ◽  
Hydrogen Atmosphere ◽  
Gel Method ◽  
Sol Gel Method ◽  
Preparation Conditions ◽  
Dense Microstructure ◽  
Zirconium Doping

AbstractThe preparation conditions of YMnO3 thin films by the sol-gel method using yttrium alkoxide were optimized to decrease the leakage current of the films. The leakage current of the films was decreased due to the dense microstructure of the films. Moreover, the heat treatment in hydrogen atmosphere and the zirconium doping resulted in a further decrease of the leakage current. The heat treatment in hydrogen atmosphere and the zirconium doping were effective in the decrease of carriers originating in the valence fluctuation of the Mn ions in YMnO3

PZT Thin Films Synthesis by Sol-Gel Method and Study of Local Ferroelectric Properties

2013 ◽  
Vol 442 (1) ◽  
pp. 95-100 ◽  
Author(s):  
M. V. Silibin ◽  
A. A. Dronov ◽  
S. A. Gavrilov ◽  
V. V. Smirnov ◽  
D. A. Kiselev ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method
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