Phonon dispersion effects on non-radiative transitions in solids

1978 ◽  
Vol 37 (1) ◽  
pp. 21-34 ◽  
Author(s):  
Yitzhak Weissman ◽  
Joshua Jortner
Keyword(s):  
Phonon Dispersion ◽  
Radiative Transitions ◽  
Dispersion Effects

scholarly journals Phonon dispersion effects and the thermal conductivity reduction in GaAs/AlAs superlattices

2000 ◽  
Vol 88 (3) ◽  
pp. 1498-1503 ◽  
Author(s):  
W. E. Bies ◽  
R. J. Radtke ◽  
H. Ehrenreich
Keyword(s):  
Thermal Conductivity ◽  
Phonon Dispersion ◽  
Dispersion Effects

Simulations of Heat Conduction in Sub-Micron Silicon-on-Insulator Transistors Accounting for Phonon Dispersion and Polarization

2003 ◽  
Author(s):  
Sreekant V. J. Narumanchi ◽  
Jayathi Y. Murthy ◽  
Cristina H. Amon
Keyword(s):  
Phonon Dispersion ◽  
Dispersion Model ◽  
Boltzmann Transport Equation ◽  
Silicon On Insulator ◽  
Gray Model ◽  
Boltzmann Transport ◽  
Polarization Effects ◽  
Self Heating ◽  
Dispersion Effects ◽  
Finite Volume Approach

In recent years, the Boltzmann transport equation (BTE) has begun to be used for predicting thermal transport in dielectrics and semicondutors at sub-micron scales. Most studies make a gray assumption and do not account for phonon dispersion or polarization in any detail. In this study, the problem of heat generation in a sub-micron silicon-on-insulator (SOI) transistor is addressed. A model, based on the solution to the BTE incorporating full phonon dispersion effects, is presented and used to study the SOI self-heating problem. A structured finite volume approach is used to solve the BTE. The results from the full phonon dispersion model are compared to predictions using the Fourier diffusion equation and also to predictions from the solution to the BTE using a semi-gray model which appears in literature. Significant differences are found between the models and confirm the need for an accounting for phonon dispersion and polarization effects.

Recent Radiative and Collisional Atomic Data of Astrophysical Interest

1988 ◽  
Vol 102 ◽  
pp. 129-132
Author(s):  
K.L. Baluja ◽  
K. Butler ◽  
J. Le Bourlot ◽  
C.J. Zeippen
Keyword(s):  
Mass Production ◽  
Bound States ◽  
Physical Models ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Atomic Data ◽  
Isoelectronic Sequence ◽  
Astrophysical Interest ◽  
Radiative Transitions ◽  
Forbidden Transitions

SummaryUsing sophisticated computer programs and elaborate physical models, accurate radiative and collisional atomic data of astrophysical interest have been or are being calculated. The cases treated include radiative transitions between bound states in the 2p4and 2s2p5configurations of many ions in the oxygen isoelectronic sequence, the photoionisation of the ground state of neutral iron, the electron impact excitation of the fine-structure forbidden transitions within the 3p3ground configuration of CℓIII, Ar IV and K V, and the mass-production of radiative data for ions in the oxygen and fluorine isoelectronic sequences, as part of the international Opacity Project.

Energy levels and radiative transitions of Mg VII and Si IX

2021 ◽  
pp. 109439
Author(s):  
Yan Sun ◽  
Feng Hu ◽  
DongDong Liu ◽  
CuiCui Sang ◽  
MaoFei Mei ◽  
...  
Keyword(s):  
Energy Levels ◽  
Radiative Transitions
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