Theoretical calculation of surface tension and its temperature coefficient associated with liquid Cu–Ti alloys

Author(s):  
Ali Dogan ◽  
Hüseyin Arslan
2006 ◽  
Vol 46 (4) ◽  
pp. 467-471 ◽  
Author(s):  
Joonho Lee ◽  
Akihito Kiyose ◽  
Masayuki Tanaka ◽  
Toshihiro Tanaka
Keyword(s):  

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Fathi Aqra ◽  
Ahmed Ayyad

This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687–1825 K and 1211–1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as and (mJ m−2), respectively. These values are in consistence with the reported experimental data (720–875 for Si and 560–632 mJ m−2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.


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