Theoretical Study of a Thermophysical Property of Molten Semiconductors
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This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687–1825 K and 1211–1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as and (mJ m−2), respectively. These values are in consistence with the reported experimental data (720–875 for Si and 560–632 mJ m−2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.
2000 ◽
Vol 208
(1-4)
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pp. 313-321
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1982 ◽
Vol 30
(8)
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pp. 1627-1637
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2010 ◽
Vol 645-648
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pp. 865-868
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