Modelling Elastic and Thermoelastic Thick Multilayered Composites by a New Constrained Discrete Layer Approach

Abstract This paper focuses on four tire computational models based on two-dimensional shear deformation theories, namely, the first-order Timoshenko-type theory, the higher-order Timoshenko-type theory, the first-order discrete-layer theory, and the higher-order discrete-layer theory. The joint influence of anisotropy, geometrical nonlinearity, and laminated material response on the tire stress-strain fields is examined. The comparative analysis of stresses and strains of the cord-rubber tire on the basis of these four shell computational models is given. Results show that neglecting the effect of anisotropy leads to an incorrect description of the stress-strain fields even in bias-ply tires.

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Three-layer composite panel with discrete layer and bionic principles

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/1083/1/012027 ◽

2021 ◽

Vol 1083 (1) ◽

pp. 012027

Author(s):

I A Mayatskaya ◽

B M Yazyev ◽

V D Eremin

Keyword(s):

Composite Panel ◽

Layer Composite ◽

Discrete Layer

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Structural, mechanical and corrosion evaluations of Cu/Zn/Al multilayered composites subjected to CARB process

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.158973 ◽

2021 ◽

Vol 867 ◽

pp. 158973

Author(s):

Mahsa Avazzadeh ◽

Morteza Alizadeh ◽

Moslem Tayyebi

Keyword(s):

Multilayered Composites

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The Formation of Cu3Si from Cu/a-Si Multilayers

MRS Proceedings ◽

10.1557/proc-481-581 ◽

1997 ◽

Vol 481 ◽

Cited By ~ 1

Author(s):

R. R. Chromik ◽

W. K. Neils ◽

E. J. Cotts

Keyword(s):

Diffusion Couples ◽

X Ray Diffraction ◽

Limited Growth ◽

Scanning Calorimetry ◽

Individual Layer ◽

Diffusion Limited ◽

Reaction Constant ◽

Multilayered Composites ◽

Reaction Constants ◽

Kinetics Of

ABSTRACTThe kinetics of the formation of Cu3Si in Cu/a-Si diffusion couples have been investigated by means of differential scanning calorimetry and x-ray diffraction. Multilayered composites of average stoichiometry Cu3Si were prepared by sputter deposition with individual layer thicknesses varying in different samples between 2 and 100 nm. We observed diffusion limited growth of Cu3 Si upon annealing these diffusion couples below 500 K. Reaction constants were measured for a temperature range of 455 to 495 K for thicknesses of growing Cu3Si between 2.6 and 80 nm. The temperature dependence of the reaction constant, k2, was characterized as k2 = k0 exp(− Ea/kbT) with activation energy, Ea = 1.0 eV/atom and pre-factor, k0 = 1.9×10−3 cm2/s.

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