scholarly journals Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

2016 ◽  
Vol 17 (2) ◽  
pp. 65-71 ◽  
Author(s):  
Yunyong Nam ◽  
Hee-Ok Kim ◽  
Sung Haeng Cho ◽  
Chi-Sun Hwang ◽  
Taeho Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Deposition Method ◽  
Zinc Oxide Thin Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Indium Gallium

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

2020 ◽  
Vol 30 (34) ◽  
pp. 2003285 ◽  
Author(s):  
Yepin Zhao ◽  
Zhengxu Wang ◽  
Guangwei Xu ◽  
Le Cai ◽  
Tae‐Hee Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Interface Engineering ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
Sign in / Sign up

Export Citation Format

Share Document