Fluorinated indium‐gallium‐zinc oxide thin‐film transistor with reduced vulnerability to hydrogen‐induced degradation
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2020 ◽
Vol 41
(6)
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pp. 856-859
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2020 ◽
Vol 30
(34)
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pp. 2003285
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2016 ◽
Vol 213
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pp. 1873-1877
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Vol 48
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pp. 1231-1233
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2014 ◽
2018 ◽
Vol 33
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pp. 035011
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