Prediction of Total Dose Effects on Sub-Micron Process Metal Oxide Semiconductor Devices

Journal of Nuclear Science and Technology ◽

10.1080/18811248.1991.9731418 ◽

1991 ◽

Vol 28 (8) ◽

pp. 707-712 ◽

Author(s):

Hiroshi KAMIMURA ◽

Masataka KATO

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dose Effects ◽

Total Dose Effects

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Prediction Method for Total Dose Effects on Complementary Metal Oxide Semiconductor Integrated Circuits

Journal of Nuclear Science and Technology ◽

10.1080/18811248.1990.9731173 ◽

1990 ◽

Vol 27 (3) ◽

pp. 215-221 ◽

Author(s):

Hiroshi KAMIMURA ◽

Masaharu SAKAGAMI

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Prediction Method ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dose Effects ◽

Total Dose Effects

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Total dose dependence of hot carrier injection effect in the n-channel metal oxide semiconductor devices

Acta Physica Sinica ◽

10.7498/aps.65.246101 ◽

2016 ◽

Vol 65 (24) ◽

pp. 246101

Author(s):

He Yu-Juan ◽

Zhang Xiao-Wen ◽

Liu Yuan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Dose Dependence ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection ◽

Injection Effect

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Effect of Temperature on Parameters in Total Dose Effect Prediction of Metal Oxide Semiconductor Devices

Journal of Nuclear Science and Technology ◽

10.1080/18811248.1991.9731484 ◽

1991 ◽

Vol 28 (12) ◽

pp. 1149-1152 ◽

Author(s):

Hiroshi KAMIMURA ◽

Masataka KATO

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dose Effect ◽

Effect Of Temperature

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Nitridation

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor

Chinese Physics B ◽

10.1088/1674-1056/27/10/104207 ◽

2018 ◽

Vol 27 (10) ◽

pp. 104207

Author(s):

Lin-Dong Ma ◽

Yu-Dong Li ◽

Lin Wen ◽

Jie Feng ◽

Xiang Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Total Ionizing Dose ◽

Active Pixel Sensor ◽

Active Pixel ◽

Dose Effects ◽

Total Ionizing Dose Effects ◽

Pinned Photodiode

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

Thin Solid Films ◽

10.1016/0040-6090(82)90138-9 ◽

1982 ◽

Vol 93 (3-4) ◽

pp. 321-330 ◽

Author(s):

K.L. Ngai ◽

S.T. Liu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Stresses ◽

Noise Measurements ◽

Dynamic Conductance

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