The orientation dependence of measured inelastic scattering probabilities for fast electrons in single crystals

1979 ◽  
Vol 12 (9) ◽  
pp. 1521-1533 ◽  
Author(s):  
C J Rossouw ◽  
M J Whelan
1976 ◽  
Vol 19 (9) ◽  
pp. 1221-1222
Author(s):  
E. K. Zavadovskaya ◽  
S. A. Vorob'ev ◽  
S. V. Plotnikov ◽  
V. A. Prets

1980 ◽  
Vol 15 (12) ◽  
pp. 1387-1391
Author(s):  
K. Schlothauer ◽  
G. Berg ◽  
F. Fröhlich

1967 ◽  
Vol 15 (7) ◽  
pp. 1179-1191 ◽  
Author(s):  
S Takeuchi ◽  
E Furubayashi ◽  
T Taoka

2014 ◽  
Vol 54 ◽  
pp. 60-68 ◽  
Author(s):  
E. Acar ◽  
H.E. Karaca ◽  
H. Tobe ◽  
R.D. Noebe ◽  
Y.I. Chumlyakov

2003 ◽  
Vol 36 (3) ◽  
pp. 940-943 ◽  
Author(s):  
M. P. Oxley ◽  
L. J. Allen

A computer program which calculates inner-shell ionization and backscattering cross sections for fast electrons incident on a crystal is presented. The program calculates the inelastic scattering coefficients for inner-shell ionization, pertinent to electron energy loss spectroscopy and energy dispersive X-ray analysis, using recently presented parameterizations of the atomic scattering factors. Orientation-dependent cross sections, suitable for atom location by channelling enhanced microanalysis, may be calculated. Inelastic scattering coefficients that allow the calculation of orientation-dependent annular dark-field and Rutherford backscattering maps are calculated using an Einstein model. In all cases, absorption due to thermal diffuse scattering, also calculated using an Einstein model, can be included.


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