Rare-earth-doped films prepared by plasma-enhanced chemical vapour deposition

1997 ◽  
Vol 30 (13) ◽  
pp. 1908-1912 ◽  
Author(s):  
M Yoshihara ◽  
A Sekiya ◽  
T Morita ◽  
K Ishii ◽  
S Shimoto ◽  
...  
Keyword(s):  
Rare Earth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Rare Earth Doped

scholarly journals Correction: Luminescent Nd2S3 thin films: a new chemical vapour deposition route towards rare-earth sulphides

2019 ◽  
Vol 48 (44) ◽  
pp. 16812-16812
Author(s):  
Stefan Cwik ◽  
Sebastian M. J. Beer ◽  
Marcel Schmidt ◽  
Nils C. Gerhardt ◽  
Teresa de los Arcos ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Dalton Trans

Correction for ‘Luminescent Nd2S3 thin films: a new chemical vapour deposition route towards rare-earth sulphides’ by Stefan Cwik et al., Dalton Trans., 2019, 48, 2926–2938.

Luminescent Nd2S3 thin films: a new chemical vapour deposition route towards rare-earth sulphides

2019 ◽  
Vol 48 (9) ◽  
pp. 2926-2938 ◽  
Author(s):  
Stefan Cwik ◽  
Sebastian M. J. Beer ◽  
Marcel Schmidt ◽  
Nils C. Gerhardt ◽  
Teresa de los Arcos ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Successful Implementation

Development of two new neodymium containing precursors and their successful implementation in the MOCVD of luminescent Nd2S3 thin films.

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings

Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hafnium Carbide ◽  
Experimental Conditions

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Aluminium Nitride ◽  
Methyl Groups ◽  
Time Resolved ◽  
Thermally Induced ◽  
Light Emitting ◽  
Carbon Impurities ◽  
Wide Range

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>

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