Optical emission spectroscopic investigation of hydrogen plasma used for modification of electrical properties of multi-crystalline silicon

2007 ◽  
Vol 40 (4) ◽  
pp. 1030-1036 ◽  
Author(s):  
S Darwiche ◽  
M Nikravech ◽  
S Awamat ◽  
D Morvan ◽  
J Amouroux
Keyword(s):  
Electrical Properties ◽  
Spectroscopic Investigation ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Optical Emission

Quantitative Studies of Glow-Discharge Deposition Using Optical Emission Spectroscopy

1984 ◽  
Vol 38 ◽  
Author(s):  
F. J. Kampas
Keyword(s):  
Electrical Properties ◽  
Glow Discharge ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Secondary Electrons ◽  
Rf Discharges ◽  
Quantitative Studies ◽  
Glow Discharge Deposition

AbstractIntensities of CH optical emission and electrical properties of methane rf discharges as a function of pressure are presented and discussed. The results are consistent with a model in which the properties of the discharge are dominated by secondary electrons traversing the gap between the electrodes.

scholarly journals PARAMETERS OF HYDROGEN PLASMA STREAMS IN QSPA-M AND THEIR DEPENDENCE ON EXTERNAL MAGNETIC FIELD

2021 ◽  
pp. 61-64
Author(s):  
M.S. Ladygina ◽  
Yu.V. Petrov ◽  
D.V. Yeliseev ◽  
V.A. Makhlai ◽  
N.V. Kulik ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Density ◽  
Hydrogen Plasma ◽  
Experimental Studies ◽  
Optical Emission ◽  
Plasma Electron ◽  
Plasma Stream ◽  
Visible Radiation ◽  
Order Of Magnitude ◽  
Plasma Electron Density

Present experimental studies are aimed at analysis of hydrogen plasma stream parameters in various working regimes of QSPA-M operation. Temporal distributions of plasma electron density are reconstructed with optical emission spectroscopy. The magnetic field influence on plasma streams parameters is analyzed. It is shown that in regimes with additional magnetic field the plasma electron density increases by an order of magnitude in comparison with a density value without magnetic field. The plasma velocity and energy density parameters as well as their temporal behaviors were estimatedin different operating regimes of QSPA-M facility. Features of plasma visible radiation were analyzed. This information is important for QSPA-M applications in experiments on interaction of powerful plasma streams with material surfaces.

Changes of morphological, optical and electrical properties induced by hydrogen plasma on (0001) ZnO Surface

2021 ◽  
Author(s):  
Zdenek Remes ◽  
Anna Artemenko ◽  
Egor Ukraintsev ◽  
Dhananjay K. Sharma ◽  
Maksym Buryi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Hydrogen Plasma ◽  
Optical And Electrical Properties

scholarly journals Application of low-temperature low-pressure hydrogen plasma: treatment of artificially prepared corrosion layers

2014 ◽  
Vol 13 (1) ◽  
Author(s):  
Petra Fojtíková ◽  
Lucie Řádková ◽  
Drahomíra Janová ◽  
František Krčma
Keyword(s):  
Low Temperature ◽  
Chemical Reduction ◽  
Hydrogen Plasma ◽  
Optical Emission ◽  
Low Pressure ◽  
Oh Radicals ◽  
Plasma Chemical ◽  
Duty Cycles ◽  
Fundamental Research ◽  
Pressure Hydrogen

AbstractThe aim of this work is the application of low-temperature low-pressure hydrogen plasma on artificially prepared corrosion layers, so called plasma chemical reduction. It is necessary to use samples with artificially prepared corrosion layers because it is impossible to use the real artifacts for fundamental research. The bronze was chosen as a sample material. Formation of corrosion layers on the bronze samples was carried out in concentrated hydrochloric acid vapors with the addition of sand. The radio-frequency hydrogen plasma was generated in the flowing regime at a pressure of 160 Pa. Different values of supplied power were chosen as well as different discharge modes: continuous or pulsed mode with varied duty cycles. By the combination of supplied power and mode factors, we selected two values of effective power. The process of plasma chemical reduction was monitored by optical emission spectroscopy (OES) and simultaneously, the sample temperature was measured. Rotational temperatures were calculated from OH radicals spectra. Changes in the structure and elemental composition were determined using scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX).

scholarly journals Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 279-284 ◽  
Author(s):  
O.F. Vyvenko ◽  
N.V. Bazlov ◽  
M.V. Trushin ◽  
A.A. Nadolinski ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Hydrogen ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Extended Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
Plasma Hydrogenation ◽  
Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

scholarly journals Effect of Hydrogen Content in Intrinsic a-Si:H on Performances of Heterojunction Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Yun-Shao Cho ◽  
Chia-Hsun Hsu ◽  
Shui-Yang Lien ◽  
Dong-Sing Wuu ◽  
In-Cha Hsieh
Keyword(s):  
Solar Cells ◽  
Hydrogen Content ◽  
Crystalline Silicon ◽  
Phase Particle ◽  
Optical Emission ◽  
Point Of View ◽  
Experimental Result ◽  
Heterojunction Solar Cells ◽  
Hydrogenated Amorphous ◽  
Silane Plasma

Influences of hydrogen content in intrinsic hydrogenated amorphous silicon (i-a-Si:H) on performances of heterojunction (HJ) solar cells are investigated. The simulation result shows that in the range of 0–18% of the i-layer hydrogen content, solar cells with higher i-layer hydrogen content can have higher degree of dangling bond passivation on single crystalline silicon (c-Si) surface. In addition, the experimental result shows that HJ solar cells with a low hydrogen content have a poor a-Si:H/c-Si interface. The deteriorate interface is assumed to be attributed to (i) voids created by insufficiently passivated c-Si surface dangling bonds, (ii) voids formed by SiH2clusters, and (iii) Si particles caused by gas phase particle formation in silane plasma. The proposed assumption is well supported and explained from the plasma point of view using optical emission spectroscopy.

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