Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

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Electrical Properties of Clustered and Precipitated Iron in Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.108-109.109 ◽

2005 ◽

Vol 108-109 ◽

pp. 109-114

Author(s):

R. Khalil ◽

Vitaly V. Kveder ◽

Wolfgang Schröter ◽

Michael Seibt

Keyword(s):

Electrical Properties ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Iron Silicide ◽

Electronic States ◽

Moderate Temperature ◽

Extended Defects ◽

Characteristic Features ◽

Transient Spectroscopy ◽

The Stability

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

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Characterisation of the Subthreshold Damage in MeV Ion Implanted p Si

MRS Proceedings ◽

10.1557/proc-510-411 ◽

1998 ◽

Vol 510 ◽

Author(s):

Shabih Fatima ◽

Jennifer Wong-Leung ◽

John Fitz Gerald ◽

C. Jagadish

Keyword(s):

Point Defects ◽

Deep Level Transient Spectroscopy ◽

Damage Evolution ◽

Peak Concentration ◽

Deep Level ◽

Extended Defects ◽

Transmission Electron ◽

Transient Spectroscopy ◽

P Type ◽

Dlts Spectra

AbstractSubthreshold damage in p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si is implanted with Si, Ge and Sn with energies in the range of 4 to 8.5 MeV, doses from 7 × 1012to 1×1014cm−2and all annealed at 800°C for 15 min. For each implanted specie, DLTS spectra show a transition dose called threshold dose above which point defects transform in to extended defects. DLTS measurements have shown for the doses below threshold, a sharp peak, corresponding to the signature of point defects and for doses above threshold a broad peak indicating the presence of extended defects. This is found to be consistent with TEM analyses where no defects are seen for the doses below threshold and the presence of extended defects for the doses above threshold. This suggests a defect transformation regime where point defects present below threshold are acting like nucleating sites for the extended defects. Also the mass dependence on the damage evolution has been observed, where rod-like defects are observed in the case of Si and (rod-like defects and loops) for Ge and Sn despite the fact that peak concentration of vacancies for Ge and Sn are normalized to the peak number of vacancies for Si.

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Electron traps in p-type GaAsN characterized by deep-level transient spectroscopy

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference 2005 PVSC-05 ◽

10.1109/pvsc.2005.1488202 ◽

2005 ◽

Cited By ~ 1

Author(s):

S.W. Johnston ◽

S. Kurtz ◽

D.J. Friedman ◽

A.J. Ptak ◽

R.K. Ahrenkiel ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Electron Traps ◽

Transient Spectroscopy ◽

P Type

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Structural and Electrical Properties of Beryllium Implanted Silicon Carbide

MRS Proceedings ◽

10.1557/proc-572-117 ◽

1999 ◽

Vol 572 ◽

Cited By ~ 3

Author(s):

T. Henkel ◽

Y. Tanaka ◽

N. Kobayashi ◽

H. Tanoue ◽

M. Gong ◽

...

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Deep Level Transient Spectroscopy ◽

Secondary Ion Mass Spectrometry ◽

Deep Level ◽

Surface Region ◽

Structural And Electrical Properties ◽

Transient Spectroscopy ◽

Secondary Ion ◽

Post Implantation

ABSTRACTStructural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500 °C and 1700 °C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450 °C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

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Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.3559739 ◽

2011 ◽

Vol 109 (6) ◽

pp. 063709 ◽

Cited By ~ 6

Author(s):

M. González ◽

A. M. Carlin ◽

C. L. Dohrman ◽

E. A. Fitzgerald ◽

S. A. Ringel

Keyword(s):

Optical Spectroscopy ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Transient Spectroscopy ◽

P Type

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Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.759 ◽

2010 ◽

Vol 645-648 ◽

pp. 759-762

Author(s):

Koutarou Kawahara ◽

Giovanni Alfieri ◽

Michael Krieger ◽

Tsunenobu Kimoto

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Reactive Ion Etching ◽

Deep Levels ◽

Total Density ◽

Ion Etching ◽

Initial Concentration ◽

Grown Sample ◽

Transient Spectroscopy ◽

P Type

In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of as-etched p-type SiC is remarkably small due to compensation or deactivation of acceptors. These acceptors can be recovered to the initial concentration of the as-grown sample after annealing at 1000oC. However, various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC. The following defects are detected by Deep Level Transient Spectroscopy (DLTS): IN2 (EC – 0.35 eV), EN (EC – 1.6 eV), IP1 (EV + 0.35 eV), IP2 (HS1: EV + 0.39 eV), IP4 (HK0: EV + 0.72 eV), IP5 (EV + 0.75 eV), IP7 (EV + 1.3 eV), and EP (EV + 1.4 eV). These defects generated by RIE can be significantly reduced by thermal oxidation and subsequent annealing at 1400oC.

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Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

physica status solidi (c) ◽

10.1002/pssc.201200163 ◽

2012 ◽

Vol 9 (10-11) ◽

pp. 1992-1995 ◽

Cited By ~ 2

Author(s):

C. K. Tang ◽

L. Vines ◽

B. G. Svensson ◽

E. V. Monakhov

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Type Silicon ◽

Transient Spectroscopy ◽

P Type

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On the Influence of Illumination During Ion Damage Defect Anneal of Silicon

MRS Proceedings ◽

10.1557/proc-396-709 ◽

1995 ◽

Vol 396 ◽

Author(s):

A. Tanabe ◽

S. Ashok

Keyword(s):

Electron Cyclotron Resonance ◽

Deep Level ◽

Hydrogen Plasma ◽

Minor Role ◽

Extended Defects ◽

Rapid Thermal Anneal ◽

Thermal Generation ◽

Ion Damage ◽

Transient Spectroscopy ◽

A Minor

AbstractAn exploratory deep level transient spectroscopy (DLTS) study on the possible role of illumination during thermal annealing has been carried out on Si with extended defects generated by Ar implantation and electron cyclotron resonance (ECR) hydrogen plasma. Experiments with rapid thermal anneal (RTA) using quartz-halogen lamps show only a minor role for illumination on anneal of defects generated by Ar ion damage as well as thermal generation of defects under post-hydrogenation anneal. However, significant differences are evident relative to conventional furnace anneal and it appears likely that recombination-assisted defect reactions may be quite significant in Si processing when high intensity sources such as arc lamps are adapted in RTA systems.

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