Reply to “Comment on ‘Effects of hydrogen dilution on the deposition process of nano-crystalline silicon film by SiCl4/H2 plasma’”

ABSTRACTThis work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≍ 4 mWcm−2) and with filament temperatures around 1850 °K have dark conductivities below 10−1Scm−1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about 10−2Scm−1.

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Depth-dependent crystallinity of nano-crystalline silicon induced by step-wise variation of hydrogen dilution during hot-wire CVD

Journal of Physics Conference Series ◽

10.1088/1742-6596/619/1/012002 ◽

2015 ◽

Vol 619 ◽

pp. 012002

Author(s):

C J Arendse ◽

B A van Heerden ◽

T F G Muller ◽

F R Cummings ◽

C J Oliphant ◽

...

Keyword(s):

Crystalline Silicon ◽

Hot Wire ◽

Hydrogen Dilution ◽

Nano Crystalline

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Application of nano-crystalline silicon film in the fabrication of field-emission pressure sensor

Science in China Series E ◽

10.1360/02ye0084 ◽

2003 ◽

Vol 46 (4) ◽

pp. 418

Author(s):

Bo LIAO

Keyword(s):

Field Emission ◽

Pressure Sensor ◽

Crystalline Silicon ◽

Silicon Film ◽

Nano Crystalline

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PHOTOLUMINESCENCE STUDY ON HYDROGENATED NANO-CRYSTALLINE SILICON FILM

Acta Physica Sinica ◽

10.7498/aps.47.864 ◽

1998 ◽

Vol 47 (5) ◽

pp. 864

Author(s):

LIU MING ◽

HE YU-LIANG ◽

JIANG XING-LIU ◽

LI GUO-HUA ◽

HAN HE-XIANG

Keyword(s):

Crystalline Silicon ◽

Silicon Film ◽

Photoluminescence Study ◽

Nano Crystalline

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Poly and Nano-crystalline High Electron Mobility Thin Film Transistors on Plastic Substrates for Large Area Applications

MRS Proceedings ◽

10.1557/proc-1030-g07-07 ◽

2007 ◽

Vol 1030 ◽

Author(s):

Sara Paydavosi ◽

Amir-Hossein Tamaddon ◽

Shams Mohajerzadeh ◽

Michael D Robertson

Keyword(s):

Thin Film ◽

Electron Mobility ◽

Thin Film Transistors ◽

Crystalline Silicon ◽

Silicon Film ◽

Chemical Vapor ◽

Rf Plasma ◽

High Electron ◽

Large Area ◽

Nano Crystalline

AbstractThin-film transistors (TFT) of poly and nano crystalline silicon have been made at temperature as low as 170°C on flexible PET (polyethylene terephthalate) substrates.The crystallization of the silicon film has been achieved using external mechanical stress assisted by a plasma hydrogenation technique. The formation of TFT is possible by means of a lateral crystallization of amorphous silicon under the channel region. High mobility TFTs with an electron mobility of 25cm2/Vs and an on/off ratio of 2000 have been obtained. Scanning electron microscopy, X-ray diffraction analysis and optical microscopy have been used to examine the crystallinity of the layer. In addition we report the deposition of high quality low-temperature silicon-oxide layers on PET substrates using an RF-plasma enhanced chemical vapor deposition unit with direct introduction of oxygen gas into the chamber and its reaction with Silane. Infrared spectroscopy was used to examine the quality of the oxide layer.

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