scholarly journals Depth-dependent crystallinity of nano-crystalline silicon induced by step-wise variation of hydrogen dilution during hot-wire CVD

2015 ◽  
Vol 619 ◽  
pp. 012002
Author(s):  
C J Arendse ◽  
B A van Heerden ◽  
T F G Muller ◽  
F R Cummings ◽  
C J Oliphant ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Hot Wire ◽  
Hydrogen Dilution ◽  
Nano Crystalline

Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Ferreira ◽  
H. Águas ◽  
L. Mendes ◽  
F. Fernandes ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Transport Properties ◽  
Oxygen Content ◽  
Hydrogen Content ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Hydrogen Dilution ◽  
Nano Crystalline ◽  
Doped Silicon

ABSTRACTThis work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≍ 4 mWcm−2) and with filament temperatures around 1850 °K have dark conductivities below 10−1Scm−1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about 10−2Scm−1.

scholarly journals Effect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth

2009 ◽  
Vol 58 (1) ◽  
pp. 565
Author(s):  
Qiu Sheng-Hua ◽  
Chen Cheng-Zhao ◽  
Liu Cui-Qing ◽  
Wu Yuan-Dan ◽  
Li Ping ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Fast Growth ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Nano Crystalline

Structure and Optoelectronic Properties as a Function of Hydrogen Dilution of Micro-Crystalline Silicon Films Prepared by Hot Wire Chemical Vapor Deposition

1999 ◽  
Vol 557 ◽  
Author(s):  
Guozhen Yue ◽  
Jing Lin ◽  
Qi Wang ◽  
Daxing Han
Keyword(s):  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Peak Position ◽  
Initial Growth ◽  
Hot Wire ◽  
Dilution Ratio ◽  
Structure Transition ◽  
Transparent Substrate ◽  
Hydrogen Dilution ◽  
Substrate Side

AbstractFilms prepared by hot wire CVD using H dilution ratio, R=H 2/SiH4, from 1 to 20 were studied by X-ray, Raman, PL, and conductivity measurements. We found that (a) when the dilution ratio reached R=3, the structure transition from amorphous to microcrystalline growth occured; meanwhile, PL spectrum showed a dual-peak at 1.3 and 1.0 eV; (b) the total intensity, band width, and peak position of the low energy PL band decreased with increasing H dilution; (c) both the Raman and PL measured from the transparent substrate side showed that initial growth tends to be amorphous and a portion of μc-Si was formed when R ≥ 5; and (d) the conductivity activation energy first decreased from 0.68 to 0.15 eV when the film transition from a- to μc-Si; then increased slightly with increasing μc-Si fraction. The results demonstrate that the variation of the H-dilution ratio has significant effects on both the film structures and the optoelectric properties.

scholarly journals MICROSTRUCTURES OF THE MICRO-CRYSTALLINE SILICON THIN FILMS PREPARED BY HOT WIRE CHEMICAL DEPOSITION WITH HYDROGEN DILUTION

1998 ◽  
Vol 47 (9) ◽  
pp. 1542
Author(s):  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
LIU JIN-LONG ◽  
HAN YI-QIN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Chemical Deposition ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
Hydrogen Dilution

Low Temperature Syntheses of Nano-crystalline Silicon Film and Si Nanorods by Hot-Wire CVD

2002 ◽  
Vol 715 ◽  
Author(s):  
Te-Chi Wong ◽  
Jih-Jen Wu
Keyword(s):  
Low Temperature ◽  
Flow Rate ◽  
Rate Ratio ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Flow Rate Ratio ◽  
Hot Wire ◽  
Tem Analysis ◽  
Nano Crystalline

AbstractLow-temperature growth of nano-crystalline silicon film and silicon nanorods by hot-wire chemical vapor deposition (HWCVD) using SiCl4/H2 gases are reported here. Nano-crystalline silicon films were deposited at a filament temperature of 1800°C, SiCl4/H2 flow rate ratio of 8/37 sccm and a substrate temperature of 150°C. The volume fraction of the crystallinity of the film characterized by Raman spectroscopy is 82%. The TEM analysis reveals that the average size of nano-crystalline silicon film is 5nm. Silicon nanorods with an average diameter of 80 nm were obtained as the SiCl4/H2 flow rate ratio was reduced to 5/30 sccm at substrate temperatures lower than 200°C. TEM analyses reveal that Si nanocrystals are embedded in an amorphous nanorods with fish-born like structure.

Effects of hydrogen dilution on deposition process of nano-crystalline silicon film by SiCl4/H2plasma

2006 ◽  
Vol 39 (14) ◽  
pp. 3030-3035 ◽  
Author(s):  
Zhaokui Wang ◽  
Yanhui Lou ◽  
Kuixun Lin ◽  
Xuanying Lin ◽  
Rui Huang ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Silicon Film ◽  
Deposition Process ◽  
Hydrogen Dilution ◽  
Nano Crystalline
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