scholarly journals Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

2010 ◽  
Vol 43 (18) ◽  
pp. 185101 ◽  
Author(s):  
S J Chung ◽  
M Senthil Kumar ◽  
Y S Lee ◽  
E-K Suh ◽  
M H An
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Epitaxial Layers ◽  
Metal Organic ◽  
P Type ◽  
Co Doped ◽  
Mg Doped

Thermal Anemometer Based on Metal Organic Chemical Vapour Deposition p-Type (Bi1−xSbx)2Te3 Thin Films

2009 ◽  
Vol 7 (5) ◽  
pp. 929-932
Author(s):  
A. Mzerd ◽  
A. Aboulfarah ◽  
A. Arbaoui ◽  
N. Hassanain ◽  
M. Abd-Lefdil ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Thermal Anemometer ◽  
P Type

scholarly journals High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Zhiming Li ◽  
Jinping Li ◽  
Haiying Jiang ◽  
Yanbin Han ◽  
Yingjie Xia ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Doping Profile ◽  
Morphological Properties ◽  
Organic Chemical ◽  
Superlattice Structure ◽  
Metal Organic ◽  
P Type ◽  
Mg Doped

The highly conductance of Mg-doped Al0.3Ga0.7N layer using low-pressure metal organic chemical vapour deposition (MOCVD) on Al0.4Ga0.6N/AlN superlattice structure was reported. The rapid thermal annealing (RTA) has been employed for the effective activation and generation of holes, and a minimum p-type resistivity of 3 Ω·cm for p-type Al0.3Ga0.7N was achieved. The RTA annealing impacted on electrical, doping profile and morphological properties of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure have been also discussed. The quality of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure degraded after annealing from HRXRD. At appropriate annealing temperature and time, surface morphology of Mg-doped Al0.3Ga0.7N can be improved. A step-like distribution of [Mg] and [H] in p-type Al0.3Ga0.7N was observed, and thermal diffusion direction of [Mg] and [H] was also discussed.

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