scholarly journals High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Zhiming Li ◽  
Jinping Li ◽  
Haiying Jiang ◽  
Yanbin Han ◽  
Yingjie Xia ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Doping Profile ◽  
Morphological Properties ◽  
Organic Chemical ◽  
Superlattice Structure ◽  
Metal Organic ◽  
P Type ◽  
Mg Doped

The highly conductance of Mg-doped Al0.3Ga0.7N layer using low-pressure metal organic chemical vapour deposition (MOCVD) on Al0.4Ga0.6N/AlN superlattice structure was reported. The rapid thermal annealing (RTA) has been employed for the effective activation and generation of holes, and a minimum p-type resistivity of 3 Ω·cm for p-type Al0.3Ga0.7N was achieved. The RTA annealing impacted on electrical, doping profile and morphological properties of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure have been also discussed. The quality of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure degraded after annealing from HRXRD. At appropriate annealing temperature and time, surface morphology of Mg-doped Al0.3Ga0.7N can be improved. A step-like distribution of [Mg] and [H] in p-type Al0.3Ga0.7N was observed, and thermal diffusion direction of [Mg] and [H] was also discussed.

Rbs and Pixe Analysis Of Hg1-xCdxTe grown by MOCVD.

1990 ◽  
Vol 216 ◽  
Author(s):  
S.P. Russo ◽  
R.G. Elliman ◽  
P.N. Johnston ◽  
G.N. Pain
Keyword(s):  
Gas Flow ◽  
Vapour Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Pixe Analysis ◽  
Mocvd Reactor ◽  
Metal Organic ◽  
Thickness Variations

ABSTRACTThe techniques, Particle Induced X-ray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS) have been used to investigate compositional and thickness uniformity of Hg1-xCdxTe (MCT) grown on GaAs substrates by Metal Organic Chemical Vapour Deposition (MOCVD). Composition and thickness variations are reported for orientations perpendicular and parallel to gas flow in the MOCVD reactor. Crystalline quality of the MCT layer was also determined by RBS channelling analysis.

Thermal Anemometer Based on Metal Organic Chemical Vapour Deposition p-Type (Bi1−xSbx)2Te3 Thin Films

2009 ◽  
Vol 7 (5) ◽  
pp. 929-932
Author(s):  
A. Mzerd ◽  
A. Aboulfarah ◽  
A. Arbaoui ◽  
N. Hassanain ◽  
M. Abd-Lefdil ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Thermal Anemometer ◽  
P Type

Effet des paramètres de croissance sur les couches épitaxiales d'InP obtenues par MOCVD (metal-organic chemical vapor deposition) à basse pression

1991 ◽  
Vol 69 (3-4) ◽  
pp. 412-421 ◽  
Author(s):  
P. Cova ◽  
R. A. Masut ◽  
J. F. Currie ◽  
A. Bensaada ◽  
R. Leonelli ◽  
...  
Keyword(s):  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Epitaxial Layers ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The development of a low pressure, horizontal MOCVD (metal-organic chemical vapour deposition) reactor has allowed us to study the effect of phosphine and trimethylindium molar fluxes on the epitaxial growth of InP. Study of the growth rate in the temperature range 550–620 °C shows that the growth can be limited by the reaction kinetics at the surface. Epitaxial layers of good morphological quality have been obtained by reducing the rate of growth even if the growth is limited by the reaction kinetics at the surface. The variation of the electronic mobility with the PH3 molar flux reveals the existence of an optimum mobility region, even with a constant V: III ratio. Photoluminescence experiments carried out on the samples show the good crystallographic quality of the epitaxial layers. Spectra taken in the energy range 0.8–1.2 eV show the evolution of two structures at 0.91 and 1.08 eV that we associate with an antisite PIn and a VIn defect, respectively.[Journal translation]

scholarly journals Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

2017 ◽  
Vol 2017 (13) ◽  
pp. 1868-1876 ◽  
Author(s):  
Samuel D. Cosham ◽  
Stephen P. Richards ◽  
Troy Manning ◽  
Michael S. Hill ◽  
Andrew L. Johnson ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Work Functions ◽  
P Type ◽  
High Work ◽  
Type Nickel

Research on the Properties of NiZnO Thin Films

2011 ◽  
Vol 130-134 ◽  
pp. 1491-1494
Author(s):  
Xin Dong ◽  
Jin Wang ◽  
Hui Wang ◽  
Zhi Feng Shi ◽  
Long Zhao
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Crystal Structure Analysis ◽  
Organic Chemical ◽  
Sapphire Substrates ◽  
Metal Organic

NiZnO thin films had been fabricated on c-plane sapphire substrates using photo-assisted metal organic chemical vapour deposition system. The crystal quality of the films had been improved greatly comparing to the results in earlier reports. The crystal structure analysis indicated the NiZnO kept the basic wurtzite structure until the content of Ni attained 0.18. The crystal and electrical properties of the films showed the content of Ni had an important effect on the properties of NiZnO films.

EFFECT OF RAPID THERMAL ANNEALING ON THE Mg-DOPED GaN/Si FILM

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4034-4039
Author(s):  
LIPING ZHU ◽  
ZHIZHEN YE ◽  
XIANFENG NI ◽  
ZHE ZHAO ◽  
BINGHUI ZHAO
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
P Type ◽  
Organic Chemical Vapor Deposition ◽  
Better Than ◽  
Mg Doped

Mg -doped GaN films have been successfully prepared on Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). Upon rapid thermal annealing (RTA) treatment, the films showed p-type conductivity with a carrier density of 7.84 cm-3, a mobility of 5.54 cm2V-1s-1, and a resistivity of about 0.144 Ωcm, which were much better than that of the films without rapid thermal annealing (RTA) treatment. It was found that the surface morphology and crystal quality of the obtained p-type GaN films were greatly improved by RTA treatment, while the residual stress and dislocations in these films were decreased.

Hollow core dislocations in Mg-doped AlGaN

2002 ◽  
Vol 743 ◽  
Author(s):  
D. Cherns ◽  
Y. Q. Wang ◽  
R. Liu ◽  
F. A. Ponce ◽  
H. Amano ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Threading Dislocations ◽  
Hollow Core ◽  
The Core ◽  
Transmission Electron ◽  
Metal Organic ◽  
Mg Doped

ABSTRACTTransmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (1020 cm−3) Al0.03Ga0.97N films grown on (0001) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1–5nm. The mechanism of hollow core formation and the role of Mg are discussed.

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