Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO2interface

2013 ◽  
Vol 87 (7) ◽  
Author(s):  
Young Jun Oh ◽  
Alex Taekyung Lee ◽  
Hyeon-Kyun Noh ◽  
K. J. Chang
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
Functional Versus ◽  
Hybrid Functional ◽  
Effective Work ◽  
Effective Work Function

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$

2007 ◽  
Vol 28 (12) ◽  
pp. 1089-1091 ◽  
Author(s):  
R. Singanamalla ◽  
H. Y. Yu ◽  
B. Van Daele ◽  
S. Kubicek ◽  
K. De Meyer
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Aluminum Ion

Investigating doping effects on high-κ metal gate stack for effective work function engineering

2013 ◽  
Vol 88 ◽  
pp. 21-26 ◽  
Author(s):  
C. Leroux ◽  
S. Baudot ◽  
M. Charbonnier ◽  
A. Van Der Geest ◽  
P. Caubet ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Doping Effects

Impact of chemical bonding difference of ALD Mo on SiO2 and Al2O3 on the effective work function of the two gate stacks

2021 ◽  
Vol 39 (4) ◽  
pp. 043201
Author(s):  
Ekaterina Zoubenko ◽  
Sara Iacopetti ◽  
Kamira Weinfeld ◽  
Yaron Kauffmann ◽  
Patrick Van Cleemput ◽  
...  
Keyword(s):  
Work Function ◽  
Chemical Bonding ◽  
Gate Stacks ◽  
Effective Work ◽  
Effective Work Function

Thermally-Stable High Effective Work Function TaCN and Ta2N Films for pMOS Metal Gate Applications

2008 ◽  
Vol 1073 ◽  
Author(s):  
Christoph Adelmann ◽  
P. Lehnen ◽  
L.-Å. Ragnarsson ◽  
T. Conard ◽  
A. Franquet ◽  
...  
Keyword(s):  
Work Function ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Films ◽  
Organic Chemical ◽  
Thermal Budget ◽  
Effective Work ◽  
Effective Work Function ◽  
Metal Organic ◽  
Spike Annealing

ABSTRACTTaCN-based metal films were grown by metal-organic chemical-vapor deposition (MOCVD) and atomic vapor-deposition (AVD). Thermal decomposition at 500ºC leads to com-positions of approximately Ta0.50C0.4N0.1 (“TaCN”), whereas a reactive process using NH3 leads to the formation of Ta0.65C0.1N0.25 (“Ta2N”) films. All films are nearly amorphous as grown and recrystallize only weakly after spike annealing at 1050°C. The thermal stability of TaCN/HfSiO4 and Ta2N/HfSiO4 stacks during spike annealing at 1050°C was studied and Si and Hf outdiffusion into TaCN or Ta2N was observed. The effective work functions of TaCN and Ta2N on HfSiO4 were found to be as high as 4.9 eV after high thermal budget. It is demonstrated that the effective work function can be further increased to 5.1 eV after high thermal budget by the insertion of a thin Al2O3 capping layer between HfSiO4 and the metal films.

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