High-performance 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

Mapping Intimacies ◽

10.1117/12.467961 ◽

2002 ◽

Author(s):

Wei Li ◽

Chang S. Peng ◽

Tomi Jouhti ◽

Janne Konttinen ◽

Emil-Mihai Pavelescu ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

High Performance ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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High performance 1.32 μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014084 ◽

2003 ◽

Author(s):

Wei Li ◽

J. Konttinen ◽

Chang Si Peng ◽

T. Jouhti ◽

E.-M. Pavelescu ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

High Performance ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

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Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

IEEE Photonics Technology Letters ◽

10.1109/68.823492 ◽

2000 ◽

Vol 12 (2) ◽

pp. 128-130 ◽

Author(s):

X. Yang ◽

J.B. Heroux ◽

M.J. Jurkovic ◽

W.I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

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High‐power (2.2 W) cw operation of (111)‐oriented GaAs/AlGaAs single‐quantum‐well lasers prepared by molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.341624 ◽

1988 ◽

Vol 64 (5) ◽

pp. 2764-2766 ◽

Author(s):

T. Hayakawa ◽

T. Suyama ◽

M. Kondo ◽

M. Hosoda ◽

S. Yamamoto ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

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Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

Electronics Letters ◽

10.1049/el:19990746 ◽

1999 ◽

Vol 35 (13) ◽

pp. 1081 ◽

Author(s):

X. Yang ◽

M.J. Jurkovic ◽

J.B. Heroux ◽

W.I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

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Long-wavelength ridge-waveguide InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy

CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671) ◽

10.1109/cleopr.2003.1277045 ◽

2004 ◽

Author(s):

J.S. Wang ◽

A.R. Kovsh ◽

R.S. Hsiao ◽

G. Lin ◽

D.A. Livshits ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Ridge Waveguide ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Long Wavelength

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High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19860054 ◽

1986 ◽

Vol 22 (2) ◽

pp. 79 ◽

Author(s):

A. Larsson ◽

M. Mittelstein ◽

Y. Arakawa ◽

A. Yariv

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

High Efficiency ◽

Quantum Well Lasers ◽

Far Field ◽

Single Quantum ◽

Single Quantum Well ◽

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Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.43714 ◽

1989 ◽

Vol 36 (11) ◽

pp. 2608

Author(s):

S.D. Offsey ◽

W.J. Schaff ◽

P.J. Tasker ◽

L.F. Eastman

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

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Very low threshold current density 1.3μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.12.150 ◽

2005 ◽

Vol 278 (1-4) ◽

pp. 734-738 ◽

Author(s):

S.M. Wang ◽

Y.Q. Wei ◽

X.D. Wang ◽

Q.X. Zhao ◽

M. Sadeghi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

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Reduction Of Residual Oxygen Incorporation In High-power Single Quantum Well Lasers Grown By Molecular Beam Epitaxy

LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics ◽

10.1109/leosst.1991.638933 ◽

2005 ◽

Author(s):

S. Ovadia ◽

H.P. Meier ◽

S.V. Iyer ◽

C. Parks

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Oxygen Incorporation ◽

Residual Oxygen

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