Characterization of InAs0.91Sb0.09for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution
2007 ◽
Vol 22
(6)
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pp. 624-628
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2006 ◽
Vol 39
(2)
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pp. 255-261
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1991 ◽
Vol 9
(3)
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pp. 1794
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2000 ◽
Vol 39
(Part 1, No. 9A)
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pp. 5039-5043
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1991 ◽
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2002 ◽
Vol 15
(3)
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pp. 159-163
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1992 ◽
Vol 31
(Part 1, No. 5A)
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pp. 1249-1254
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