Scanning Kelvin probe measurements on As-doped CdTe solar cells

2013 ◽  
Vol 28 (10) ◽  
pp. 105024 ◽  
Author(s):  
W S M Brooks ◽  
S J C Irvine ◽  
D M Taylor
Keyword(s):  
Solar Cells ◽  
Kelvin Probe ◽  
Cdte Solar Cells ◽  
Scanning Kelvin Probe ◽  
Probe Measurements

Scanning Kelvin Probe Microscopy of CdTe Solar Cells Measured Under Different Bias Conditions

2009 ◽  
Vol 1165 ◽  
Author(s):  
Helio Moutinho ◽  
Ramesh Dhere ◽  
Chun-Sheng Jiang ◽  
Mowafak Al-Jassim
Keyword(s):  
Electric Field ◽  
Cross Sections ◽  
Electrical Potential ◽  
Kelvin Probe ◽  
Electrical Measurements ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Cdte Solar Cells ◽  
Gaas Substrates ◽  
Scanning Kelvin Probe

AbstractWe have investigated different methods for preparing CdTe/CdS cross sections for electrical measurements, including the following: cleaving; using GaAs substrates; and sandwiching the structure between the substrate and a glass slide, and polishing with diamond discs and alumina suspension. The latter method proved to be the most reliable, with a success rate of over 90%.We investigated cross sections of CdTe/CdS samples with scanning Kelvin probe microscopy (SKPM) using two different methods: applying the alternate bias with a frequency equal to 18.5 kHz, or equal to the frequency of the second cantilever resonance peak. The results showed that using the second resonance frequency produced a smoother signal, allowing the calculation of the electric field inside the device using just the raw SKPM data.We were able to measure the distribution of the electrical potential inside working devices. Then, by taking the first derivative of the potential, we calculated the electric field and determined the location of the p-n junction.

Surface Potential and Surface Photovoltage of Oxide and Nitride coated multicrystalline Silicon Solar Cells using a Scanning Kelvin Probe

2004 ◽  
Vol 808 ◽  
Author(s):  
Iain D. Baikie
Keyword(s):  
Solar Cells ◽  
Surface Potential ◽  
Multicrystalline Silicon ◽  
Surface Photovoltage ◽  
Silicon Solar Cells ◽  
Electrical Characteristics ◽  
Nitride Coating ◽  
Kelvin Probe ◽  
Thin Coatings ◽  
Scanning Kelvin Probe

ABSTRACTWe have applied a high resolution scanning Kelvin probe to perform dark surface potential topographies of multicrystalline silicon solar cells having thin coatings of Si3N4 and SiO2. We clearly observe the electrical characteristics of the screen printed bus-bar and associated fingers, grain boundaries, together with characteristic structures on the oxide and nitride, coupled to significant surface potential variations across larger sections of the wafer. Associated surface photovoltage measurements can be unambiguously decoded to show coating and bulk contributions. The nitride coating exhibits carrier trapping lifetimes in excess of 13 minutes at 300K.

Measurement of built-in electrical potential in III–V solar cells by scanning Kelvin probe microscopy

2003 ◽  
Vol 93 (12) ◽  
pp. 10035-10040 ◽  
Author(s):  
Chun-Sheng Jiang ◽  
H. R. Moutinho ◽  
D. J. Friedman ◽  
J. F. Geisz ◽  
M. M. Al-Jassim
Keyword(s):  
Solar Cells ◽  
Electrical Potential ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Scanning Kelvin Probe
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