scholarly journals Electronic structure of spinel oxides: zinc aluminate and zinc gallate

1999 ◽  
Vol 11 (18) ◽  
pp. 3635-3644 ◽  
Author(s):  
Suresh K Sampath ◽  
D G Kanhere ◽  
Ravindra Pandey
Keyword(s):  
Electronic Structure ◽  
Zinc Aluminate ◽  
Zinc Gallate ◽  
Spinel Oxides

scholarly journals Atomistic Simulation Study of Spinel Oxides: Zinc Aluminate and Zinc Gallate

2004 ◽  
Vol 82 (12) ◽  
pp. 3337-3341 ◽  
Author(s):  
Ravindra Pandey ◽  
Julian D. Gale ◽  
Suresh K. Sampath ◽  
Jose M. Recio
Keyword(s):  
Simulation Study ◽  
Atomistic Simulation ◽  
Zinc Aluminate ◽  
Zinc Gallate ◽  
Spinel Oxides

Turning-on Persistent Luminescence out of Zinc Aluminate Nanoparticles by Instilling Antisite Defect under Mild Conditions

Nanoscale ◽  
2021 ◽  
Author(s):  
Xiaodan Huang ◽  
Xiaojun Wei ◽  
Yan Zeng ◽  
Lihong Jing ◽  
Haoran Ning ◽  
...  
Keyword(s):  
Antisite Defect ◽  
Zinc Aluminate ◽  
Persistent Luminescence ◽  
Spinel Oxide ◽  
Mild Conditions ◽  
Zinc Gallate

Spinel oxide nanocrystals are appealing hosts for Cr3+ for forming persistent luminescent nanomaterials due to their suitable fundamental bandgaps. Benefiting from their antisite defect-tolerant nature, zinc gallate doped with Cr3+...

scholarly journals Electronic structure and band gap of zinc spinel oxides beyond LDA: ZnAl2O4, ZnGa2O4and ZnIn2O4

2011 ◽  
Vol 13 (6) ◽  
pp. 063002 ◽  
Author(s):  
H Dixit ◽  
N Tandon ◽  
S Cottenier ◽  
R Saniz ◽  
D Lamoen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Spinel Oxides

Electronic structure of spinel oxides ZnSc2O4 and ZnY2O4: A first principle study

2015 ◽  
Author(s):  
Anima Ghosh ◽  
Anita Kumari ◽  
M. Rajagopalan ◽  
R. Thangavel
Keyword(s):  
Electronic Structure ◽  
First Principle ◽  
Spinel Oxides

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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