Atomic origin of the surface components in the high-resolution Si 2p core level spectrum of Si (110) `8×2'

2001 ◽  
Vol 13 (31) ◽  
pp. 6609-6614
Author(s):  
N Safta
Keyword(s):  
High Resolution ◽  
Core Level ◽  
Core Level Spectrum ◽  
Level Spectrum

Physics of the Be(0001) surface core-level spectrum

1994 ◽  
Vol 50 (23) ◽  
pp. 17480-17486 ◽  
Author(s):  
Peter J. Feibelman ◽  
R. Stumpf
Keyword(s):  
Core Level ◽  
Core Level Spectrum ◽  
Level Spectrum

Physics of theBe(101¯0)Surface Core Level Spectrum

1998 ◽  
Vol 81 (15) ◽  
pp. 3271-3274 ◽  
Author(s):  
S. Lizzit ◽  
K. Pohl ◽  
A. Baraldi ◽  
G. Comelli ◽  
V. Fritzsche ◽  
...  
Keyword(s):  
Core Level ◽  
Core Level Spectrum ◽  
Level Spectrum

Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis

2000 ◽  
Vol 166 (1-4) ◽  
pp. 214-219 ◽  
Author(s):  
P De Padova ◽  
R Larciprete ◽  
C Quaresima ◽  
A Reginelli ◽  
P Perfetti
Keyword(s):  
High Resolution ◽  
Temperature Effect ◽  
Core Level

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

Adsorption of lithium on the Si(111)7×7 surface studied with high resolution core-level spectroscopy

1993 ◽  
Vol 284 (1-2) ◽  
pp. L384-L388 ◽  
Author(s):  
T.M. Grehk ◽  
C.U.S. Larsson ◽  
N.P. Prince ◽  
S.A. Flodström
Keyword(s):  
High Resolution ◽  
Core Level

Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation

2001 ◽  
Vol 280 (1-3) ◽  
pp. 150-155 ◽  
Author(s):  
Florence Jolly ◽  
François Rochet ◽  
Georges Dufour ◽  
Christoph Grupp ◽  
Amina Taleb-Ibrahimi
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Silicon Surfaces

High-resolution measurements of near-edge resonances in the core-level photoionization spectra ofSF6

1993 ◽  
Vol 47 (1) ◽  
pp. 361-373 ◽  
Author(s):  
E. Hudson ◽  
D. A. Shirley ◽  
M. Domke ◽  
G. Remmers ◽  
A. Puschmann ◽  
...  
Keyword(s):  
High Resolution ◽  
Core Level ◽  
The Core

The adsorption of silicon on an iridium surface ruling out silicene growth

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7085-7094 ◽  
Author(s):  
Mauro Satta ◽  
Paolo Lacovig ◽  
Nicoleta Apostol ◽  
Matteo Dalmiglio ◽  
Fabrizio Orlando ◽  
...  
Keyword(s):  
High Resolution ◽  
Metal Surface ◽  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Clean Metal Surface ◽  
Clean Metal

We followed the adsorption of Si on the Ir(111) surface via high resolution core level photoelectron spectroscopy, starting from the clean metal surface up to a coverage exceeding one monolayer.

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