Luminescence properties of Cu2+-doped TMA2MnBr4crystals and a spectroscopic study of the CuBr42-complexes formed

ABSTRACTAn extremely dense single crystal of PbF2 with the orthorhombic structure is an attractive material for use as a scintillator. Its luminescence properties are quite different from those of the currently well-known cubic PbF2 crystal. The spectroscopic study of orthorhombic and cubic monocrystals of PbF2 as well as of crystals of mixed structure containing both the orthorhombic and cubic phases is presented in the paper. The orthorhombic PbF2 luminescence contains a visual part with the rapid kinetics (≈100 ns) at temperatures near 100 K.

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Some Results of the Spectroscopic Study of Four Close Binary Systems of Early Spectral Types

International Astronomical Union Colloquium ◽

10.1017/s025292110002755x ◽

1965 ◽

Vol 5 ◽

pp. 120-130

Author(s):

T. S. Galkina

Keyword(s):

Spectroscopic Study ◽

Spectral Type ◽

Spectroscopic Investigation ◽

Binary Systems ◽

Quantitative Information ◽

Close Binary ◽

Physical Parameters ◽

Absorption And Emission ◽

Close Binary Systems ◽

Quantitative Estimates

It is necessary to have quantitative estimates of the intensity of lines (both absorption and emission) to obtain the physical parameters of the atmosphere of components.Some years ago at the Crimean observatory we began the spectroscopic investigation of close binary systems of the early spectral type with components WR, Of, O, B to try and obtain more quantitative information from the study of the spectra of the components.

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Luminescence from individual dislocations in II-VI and III-V semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088488 ◽

1991 ◽

Vol 49 ◽

pp. 834-835

Author(s):

J W Steeds

Keyword(s):

Group Iv ◽

Luminescence Properties ◽

Carrier Recombination ◽

Transmission Electron ◽

Wide Range ◽

Basic Physics ◽

Semiconducting Compounds ◽

Diamond Group ◽

Non Destructive ◽

Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

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