Asymmetric inter-subband phonon scattering associated with the intra-collisional field effect in one-dimensional quantum wires

Quantum kinetic transport under high electric fields is investigated with emphasis on the intracollisional field effect (ICFE) in low-dimensional structures. It is shown that the ICFE in GaAs one-dimensional quantum wires is already significant under moderate electric field strengths (≥ a few hundreds V/cm). This is a marked contrast to the cases in bulk, where the ICFE is expected to be significant under extremely strong electric fields (≥ MV/cm). Employing the Monte Carlo method including the ICFE, the electron drift velocity in quantum wires is shown to be much smaller than that expected from earlier investigations.

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SCATTERING TIME ENGINEERING IN QUANTUM-BASED ELECTRONIC DEVICES

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156498000075 ◽

1998 ◽

Vol 09 (01) ◽

pp. 125-144

Author(s):

JEAN-PIERRE LEBURTON

Keyword(s):

Quantum Dot ◽

Phonon Scattering ◽

Quantum Wires ◽

Differential Resistance ◽

One Dimensional ◽

Linear Chains ◽

Low Dimensionality ◽

Scattering Time ◽

Hopping Conductance ◽

Electron Phonon Scattering

The interplay between geometrical confinement and materials considerations can efficiently reduce phonon-assisted transport, enabling scattering time and dissipation engineering in quantum devices. In resonant tunneling (RT) structures, quenching of phonon-assisted transmission leading to considerable reduction of the off-resonance valley-current is shown to occur in interband devices. In structures of low dimensionality such as quantum wires, electron-phonon scattering exhibits size effects and intersubband resonances which modulates the drift velocity and conductance of one-dimensional systems. Quantum dot nanostructures offer large flexibility for reduction and modulation of dissipative processes such as oscillatory hopping conductance induced by acoustic phonons in linear chains of quantum dots or negative differential resistance curve shaping in RT through quantum dot arrays.

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Criteria for the observation of one‐dimensional transport in split‐gate field‐effect quantum wires

Applied Physics Letters ◽

10.1063/1.104710 ◽

1991 ◽

Vol 58 (25) ◽

pp. 2966-2968 ◽

Cited By ~ 6

Author(s):

Cristopher C. Eugster ◽

Jesús A. del Alamo ◽

Paul A. Belk ◽

Michael J. Rooks

Keyword(s):

Field Effect ◽

Quantum Wires ◽

One Dimensional

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Polar Optical Phonon Instability and Intervalley Transfer in Gallium Nitride

MRS Proceedings ◽

10.1557/proc-512-549 ◽

1998 ◽

Vol 512 ◽

Cited By ~ 2

Author(s):

B. E. Foutz ◽

S. K. O'leary ◽

M. S. Shur ◽

L. F. Eastman ◽

B. L. Gelmont ◽

...

Keyword(s):

Gallium Nitride ◽

Analytical Model ◽

Optical Phonon ◽

Room Temperature ◽

Phonon Scattering ◽

Polar Optical Phonon ◽

Scattering Mechanism ◽

Loss Mechanism ◽

One Dimensional ◽

Optical Phonon Scattering

ABSTRACTWe develop a simple, one-dimensional, analytical model, which describes electron transport in gallium nitride. We focus on the polar optical phonon scattering mechanism, as this is the dominant energy loss mechanism at room temperature. Equating the power gained from the field with that lost through scattering, we demonstrate that beyond a critical electric field, 114 kV/cm at T = 300 K, the power gained from the field exceeds that lost due to polar optical phonon scattering. This polar optical phonon instability leads to a dramatic increase in the electron energy, this being responsible for the onset of intervalley transitions. The predictions of our analytical model are compared with those of Monte Carlo simulations, and are found to be in satisfactory agreement.

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