Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented

2007 ◽  
Vol 18 (25) ◽  
pp. 255201 ◽  
Author(s):  
Marc Bescond ◽  
Nicolas Cavassilas ◽  
Michel Lannoo
Keyword(s):  
Effective Mass ◽  
Semiconductor Nanowire ◽  
Type Semiconductor ◽  
Nanowire Mosfets ◽  
Effective Mass Approach

scholarly journals Electron-electron scattering in a double quantum dot: Effective mass approach

2010 ◽  
Vol 133 (10) ◽  
pp. 104704 ◽  
Author(s):  
S. Yu. Kruchinin ◽  
A. V. Fedorov ◽  
A. V. Baranov ◽  
T. S. Perova ◽  
K. Berwick
Keyword(s):  
Quantum Dot ◽  
Effective Mass ◽  
Electron Scattering ◽  
Double Quantum ◽  
Double Quantum Dot ◽  
Effective Mass Approach

PERFORMANCE COMPARISON OF SCALED III-V AND Si BALLISTIC NANOWIRE MOSFETs

2009 ◽  
Vol 19 (01) ◽  
pp. 15-22
Author(s):  
LINGQUAN (DENNIS) WANG ◽  
BO YU ◽  
PETER M. ASBECK ◽  
YUAN TAUR ◽  
MARK RODWELL
Keyword(s):  
Effective Mass ◽  
Density Of States ◽  
Ballistic Transport ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Performance Comparison ◽  
Electron Velocity ◽  
Ballistic Limit ◽  
Saturation Current ◽  
Nanowire Mosfets

This paper describes analysis and simulations of Si and III-V Gate-All-Around nanowire MOSFETS assuming ballistic or quasi-ballistic transport. It is found that either channel material can provide the higher saturation current depending on the oxide thickness. For effective oxide thickness above approximately 0.5nm, the higher electron velocity of III-V's outweighs the higher density of states available in the Si device associated with higher effective mass and valley degeneracy and result in higher current for the III-V device. However, materials with higher effective mass and valley degeneracy result in smaller on-resistance in ballistic limit. Depending on the gate oxide capacitance, valley degeneracy may influence the attainable saturation current in a positive or negative way.

An atomistic-based correction of the effective-mass approach for investigating quantum dots

2008 ◽  
Vol 104 (10) ◽  
pp. 104309 ◽  
Author(s):  
S. Rodríguez-Bolívar ◽  
F. M. Gómez-Campos ◽  
J. E. Carceller
Keyword(s):  
Quantum Dots ◽  
Effective Mass ◽  
Effective Mass Approach

scholarly journals Interpretation of the vibrational relaxation of H2 in H2 within the semiclassical effective mass approach

2007 ◽  
Vol 127 (11) ◽  
pp. 114317 ◽  
Author(s):  
E. I. Dashevskaya ◽  
I. Litvin ◽  
E. E. Nikitin ◽  
J. Troe
Keyword(s):  
Effective Mass ◽  
Vibrational Relaxation ◽  
Effective Mass Approach

Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass

2007 ◽  
Vol 91 (1) ◽  
pp. 012104 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Maiko Kikuchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Effective Mass ◽  
Heavy Hole ◽  
Hole Doping ◽  
Epitaxial Thin Films ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type
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