Fabricating a silicon nanowire by using the proximity effect in electron beam lithography for investigation of the Coulomb blockade effect

2010 ◽  
Vol 22 (3) ◽  
pp. 035302 ◽  
Author(s):  
Xiangao Zhang ◽  
Zhonghui Fang ◽  
Kunji Chen ◽  
Jun Xu ◽  
Xinfan Huang
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Coulomb Blockade ◽  
Silicon Nanowire

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction

scholarly journals Proximity Effect Aware Detailed Placement in Electron Beam Lithography

2018 ◽  
Vol 232 ◽  
pp. 04046
Author(s):  
Yuhang Chen ◽  
Zhipeng Huang ◽  
Xiongfeng Chen ◽  
Jianli Chen ◽  
Wenxing Zhu
Keyword(s):  
Electron Beam ◽  
Objective Function ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
State Of The Art ◽  
Experimental Result ◽  
Accurate Evaluation ◽  
Evaluation Scheme ◽  
Gauss Transform ◽  
Detailed Placement

Proximity effect is one of the most tremendous consequences that produces unacceptable exposures during electron beam lithography (EBL), and thus distorting the layout pattern. In this paper, we propose the first work which considers the proximity effect during layout stage. We first give an accurate evaluation scheme to estimate the proximity effect by fast Gauss transform. Then, we devote a proximity effect aware detailed placement objective function to simultaneously consider wirelength, density and proximity effect. Furthermore, cell swapping and cell matching based methods are used to optimize the objective function such that there is no overlap among cells. Compared with a state-of-the-art work, experimental result shows that our algorithm can efficiently reduce the proximity variations and maintain high wirelength quality at a reasonable runtime.

Proximity Effect Correction For Electron Beam Lithography: Highly Accurate Correction Method

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7546-7551 ◽  
Author(s):  
Takashi Kamikubo ◽  
Takayuki Abe ◽  
Susumu Oogi ◽  
Hiroto Anze ◽  
Mitsuko Shimizu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Correction Method ◽  
Proximity Effect Correction

Three-Dimensional Proximity Effect Correction for Multilayer Structures in Electron Beam Lithography

2004 ◽  
Vol 43 (6B) ◽  
pp. 3762-3766 ◽  
Author(s):  
Kozo Ogino ◽  
Hiromi Hoshino ◽  
Yasuhide Machida ◽  
Morimi Osawa ◽  
Hiroshi Arimoto ◽  
...  
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Three Dimensional ◽  
Multilayer Structures ◽  
Proximity Effect Correction
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