MBE-grown Si and Si1−xGexquantum dots embedded within epitaxial Gd2O3on Si(111) substrate for floating gate memory device
2016 ◽
Vol 12
(2)
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pp. 276-280
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Keyword(s):
2014 ◽
Vol 35
(7)
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pp. 744-746
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Keyword(s):
2003 ◽
Vol 50
(2)
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pp. 510-513
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2014 ◽
Vol 53
(4S)
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pp. 04ED14
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