This paper shows that using the Finite Element Method (FEM), the torsional stiffness of silicon varies by the least amount on silicon (111) with respect to crystallographic directions, when compared to silicon (100) and (110). The used simulator is ANSYS 5.7 with the element type of Solid 64. As a simulation model, we use a simple torsion system, in which a rotational inertia is attached to the center of clamped-clamped beam with a rectangular cross-section. From the results of the modal analysis, the torsional stiffness is derived using the formula between the natural frequency and the torsional stiffness. Simulation results show that the maximum variations of the torsional stiffness on silicon (111), (100) and (110) are 2.3%, 26.5%, and 31.2%, respectively. This implies that on <100> and <110> silicon wafers, substantially different physical dimensions are necessary for devices with the same torsional characteristics, but with different orientations. Therefore, <111> silicon wafers represent a more suitable substrate to design and fabricate torsional micro and nano systems.